We consider a double-stranded DNA molecule connected to non-magnetic and magnetic (nickel (Ni) and iron (Fe)) leads and study its spintronic properties using tight binding non-equilibrium Green function method. By considering the combination of the spin-orbit coupling, the environment-induced dephasing, and the helical symmetry, it is shown that although the hopping parameter of spin up electrons is higher than spin down electrons for both Ni and Fe leads, the spin up (spin down) current is significantly higher than spin down (spin up) current when the lead is Ni (Fe) and for non-magnetic leads the difference is not high with respect to magnetic leads, i.e., there should be a matching process rule between leads and dsDNA. Also, we show that by applying an AC electric (gating) field perpendicular to helix-axis, the spin current is approximately zero at half period and will be maximized for specific gate voltage at other half period and therefore dsDNA habits as a field effect transistor (FET). It is found that there are both p-channel and n-channel FET and the logical cell can be designed theoretically. We think that the results of present paper could motivate further experimental studies on DNA spintronics.
Skip Nav Destination
Article navigation
21 February 2013
Research Article|
February 21 2013
Double-stranded DNA field effect transistor and logical cells
Hamidreza Simchi;
Hamidreza Simchi
a)
1
Department of Physics, Iran University of Science and Technology
, Narmak, Tehran 16844, Iran
2
Semiconductor Technology Center
, Tehran, Iran
Search for other works by this author on:
Mahdi Esmaeilzadeh;
Mahdi Esmaeilzadeh
1
Department of Physics, Iran University of Science and Technology
, Narmak, Tehran 16844, Iran
Search for other works by this author on:
Houssien Mazidabadi
Houssien Mazidabadi
1
Department of Physics, Iran University of Science and Technology
, Narmak, Tehran 16844, Iran
Search for other works by this author on:
a)
Electronic address: simchi@iust.ac.ir.
J. Appl. Phys. 113, 074701 (2013)
Article history
Received:
January 22 2013
Accepted:
January 28 2013
Citation
Hamidreza Simchi, Mahdi Esmaeilzadeh, Houssien Mazidabadi; Double-stranded DNA field effect transistor and logical cells. J. Appl. Phys. 21 February 2013; 113 (7): 074701. https://doi.org/10.1063/1.4792648
Download citation file:
Pay-Per-View Access
$40.00
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Selecting alternative metals for advanced interconnects
Jean-Philippe Soulié, Kiroubanand Sankaran, et al.
Defects in semiconductors
Cyrus E. Dreyer, Anderson Janotti, et al.
Related Content
Spin transport and spin polarization properties in double-stranded DNA
J. Appl. Phys. (November 2013)
Proximity-induced superconductivity effect in a double-stranded DNA
J. Appl. Phys. (February 2014)
The effect of a magnetic field on the spin-selective transport in double-stranded DNA
J. Appl. Phys. (May 2014)
Numerical simulation on the mechanical characteristics of double-stranded DNA under axial stretching and lateral unzipping
J. Appl. Phys. (April 2007)
Mechanical characteristic of ssDNA∕dsDNA molecule under external loading
Appl. Phys. Lett. (January 2006)