The ballistic transport and junction stability of epitaxial Au, grown on Si (111) and (001) substrates via electrodeposition, have been investigated as a function of Au thickness (6.7–14.1 nm). Scanning tunneling microscopy (STM) with ballistic emission electron microscopy (BEEM) showed hot electron transmission for diodes with Au thicknesses greater than 7 nm, whereas for thinner samples surface or interfacial oxidation meant that macroscopic current-voltage characteristics gave high barrier heights (0.8 eV) but no detectable BEEM transport at room temperature. Diodes that remained electrically stable for several months after exposure to air also show an atomically abrupt and epitaxial Au/Si interface via cross-sectional transmission electron microscopy. Degradation in rectifying diode properties through surface or interfacial reactions is indicated by poorer STM images and decreasing or no BEEM transmission, correlated with the formation of a continuous interfacial layer.
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14 February 2013
Research Article|
February 12 2013
Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition
Azadeh Akhtari-Zavareh;
Azadeh Akhtari-Zavareh
1
Department of Physics, Simon Fraser University
, BC V5A1S6, Canada
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Wenjie Li;
Wenjie Li
1
Department of Physics, Simon Fraser University
, BC V5A1S6, Canada
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Fouad Maroun;
Fouad Maroun
2
Physique de la Matière Condensée, CNRS, Ecole Polytechnique
, 91128 Palaiseau, France
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Philippe Allongue;
Philippe Allongue
2
Physique de la Matière Condensée, CNRS, Ecole Polytechnique
, 91128 Palaiseau, France
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Karen L. Kavanagh
Karen L. Kavanagh
1
Department of Physics, Simon Fraser University
, BC V5A1S6, Canada
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J. Appl. Phys. 113, 063708 (2013)
Article history
Received:
July 09 2012
Accepted:
January 28 2013
Citation
Azadeh Akhtari-Zavareh, Wenjie Li, Fouad Maroun, Philippe Allongue, Karen L. Kavanagh; Improved chemical and electrical stability of gold silicon contacts via epitaxial electrodeposition. J. Appl. Phys. 14 February 2013; 113 (6): 063708. https://doi.org/10.1063/1.4792000
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