The potentialities of AlGaN/GaN nanodevices as THz detectors are analyzed. Nanochannels with broken symmetry (so called self switching diodes) have been fabricated for the first time in this material system using both recess-etching and ion implantation technologies. The responsivities of both types of devices have been measured and explained using Monte Carlo simulations and non linear analysis. Sensitivities up to 100 V/W are obtained at 0.3 THz with a 280 pW/Hz1/2 noise equivalent power.
Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels
Paul Sangaré, Guillaume Ducournau, Bertrand Grimbert, Virginie Brandli, Marc Faucher, Christophe Gaquière, Ana Íñiguez-de-la-Torre, Ignacio Íñiguez-de-la-Torre, J. F. Millithaler, Javier Mateos, Tomas González; Experimental demonstration of direct terahertz detection at room-temperature in AlGaN/GaN asymmetric nanochannels. J. Appl. Phys. 21 January 2013; 113 (3): 034305. https://doi.org/10.1063/1.4775406
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