A nanomechanical lab-on-chip set-up has been used to study the creep/relaxation response of thin palladium films with temperature. The basic idea is to use residual stresses present in a silicon nitride thin beam to load the test film after etching the underneath sacrificial layer. The main advantage of this experimental method is that we can simultaneously perform thousands of creep/relaxation tests without monopolizing any external actuating/loading equipment and without using any time consuming calibration procedures. A signature of the dominant relaxation mechanism is given by the activation volume which has been determined for different levels of plastic deformation and different temperatures. The activation volume is equal to ∼15-40 b3 at room temperature and tends to decrease with increasing plastic deformation. The activation volume decreases when relaxation takes place at 50 °C down to ∼7-20 b3. These variations of the activation volume indicate the competition between two different thermally activated deformation mechanisms in the temperature range between 20 °C and 50 °C.
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14 January 2013
Research Article|
January 14 2013
Study of creep/relaxation mechanisms in thin freestanding nanocrystalline palladium films through the lab-on-chip technology
G. Guisbiers;
1
Research Center in Micro and Nanoscopic Materials and Electronic Devices (CeRMIN), Université catholique de Louvain
, Louvain-la-Neuve, Belgium
2
Institute of Mechanics, Materials and Civil Engineering (IMMC), Université catholique de Louvain, Place Sainte Barbe 2
, 1348 Louvain-la-Neuve, Belgium
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M.-S. Colla;
M.-S. Colla
1
Research Center in Micro and Nanoscopic Materials and Electronic Devices (CeRMIN), Université catholique de Louvain
, Louvain-la-Neuve, Belgium
2
Institute of Mechanics, Materials and Civil Engineering (IMMC), Université catholique de Louvain, Place Sainte Barbe 2
, 1348 Louvain-la-Neuve, Belgium
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M. Coulombier;
M. Coulombier
1
Research Center in Micro and Nanoscopic Materials and Electronic Devices (CeRMIN), Université catholique de Louvain
, Louvain-la-Neuve, Belgium
2
Institute of Mechanics, Materials and Civil Engineering (IMMC), Université catholique de Louvain, Place Sainte Barbe 2
, 1348 Louvain-la-Neuve, Belgium
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J.-P. Raskin;
J.-P. Raskin
1
Research Center in Micro and Nanoscopic Materials and Electronic Devices (CeRMIN), Université catholique de Louvain
, Louvain-la-Neuve, Belgium
3
Information and Communication Technologies, Electronics and Applied Mathematic (ICTEAM), Université catholique de Louvain
, Place du Levant 3, 1348 Louvain-la-Neuve, Belgium
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T. Pardoen
T. Pardoen
1
Research Center in Micro and Nanoscopic Materials and Electronic Devices (CeRMIN), Université catholique de Louvain
, Louvain-la-Neuve, Belgium
2
Institute of Mechanics, Materials and Civil Engineering (IMMC), Université catholique de Louvain, Place Sainte Barbe 2
, 1348 Louvain-la-Neuve, Belgium
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]. Present address: Research Institute for Science and Material Engineering (ChIPS department), University of Mons, 23 Place du Parc, 7000 Mons, Belgium.
J. Appl. Phys. 113, 024513 (2013)
Article history
Received:
October 30 2012
Accepted:
December 17 2012
Citation
G. Guisbiers, M.-S. Colla, M. Coulombier, J.-P. Raskin, T. Pardoen; Study of creep/relaxation mechanisms in thin freestanding nanocrystalline palladium films through the lab-on-chip technology. J. Appl. Phys. 14 January 2013; 113 (2): 024513. https://doi.org/10.1063/1.4775398
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