Boron-induced charge traps near the interface of Si/SiO2 systems are investigated by time-dependent second harmonic generation (TD-SHG), a technique which is sensitive to interface electric fields. Using this approach, we monitored the modification of the charge state of the traps after systematic annealing in H2, Ar, and 1 mTorr vacuum at the temperatures of about 200 °C and 800 °C, and in 100 °C deionized-water. The initial decreasing TD-SHG signals were found to be significantly diminished upon annealing in the non-oxygen environments. We attribute the observed TD-SHG experimental results to neutralization of the built-in boron-induced charge traps and discuss possible mechanisms.

1.
J. W.
Colby
,
J. Electrochem. Soc.
123
,
409
(
1976
).
2.
D.
Wristers
,
L. K.
Han
,
T.
Chen
,
H. H.
Wang
,
D. L.
Kwong
,
M.
Allen
, and
J.
Fulford
,
Appl. Phys. Lett.
68
,
2094
(
1996
).
3.
Y.
Wu
,
H.
Niimi
,
H.
Yang
,
G.
Lucovsky
, and
R. B.
Fair
,
J. Vac. Sci. Technol. B
17
,
1813
(
1999
).
4.
B.
Kim
,
Microelectron. Eng.
36
,
313
(
1997
).
5.
T.
Brozek
,
C.
Kyono
, and
V.
Ilderem
,
Solid-State Electron.
45
,
1293
(
2001
).
6.
T.
Scheidt
,
E. G.
Rohwer
,
P.
Neethling
,
H. M.
von Bergmann
, and
H.
Stafast
,
J. Appl. Phys.
104
,
083712
(
2008
).
7.
H.
Park
,
J.
Qi
,
Y.
Xu
,
K.
Varga
,
S. M.
Weiss
,
B. R.
Rogers
,
G.
Lüpke
, and
N.
Tolk
,
Appl. Phys. Lett.
95
,
062102
(
2009
).
8.
H.
Park
,
Y.
Xu
,
K.
Varga
,
J.
Qi
,
L. C.
Feldman
,
G.
Lüpke
, and
N.
Tolk
,
Appl. Phys. Lett.
97
,
202105
(
2010
).
9.
M.
Otani
,
K.
Shiraishi
, and
A.
Oshiyama
,
Phys. Rev. Lett.
90
,
075901
(
2003
).
10.
M.
Otani
,
K.
Shiraishi
, and
A.
Oshiyama
,
Phys. Rev. B
68
,
184112
(
2003
).
11.
J. G.
Mihaychuk
,
J.
Bloch
,
Y.
Liu
, and
H. M.
van Driel
,
Opt. Lett.
20
,
2063
(
1995
).
12.
J.
Bloch
,
J.
Mihaychuk
, and
H.
van Driel
,
Phys. Rev. Lett.
77
,
920
(
1996
).
13.
J. L.
Fiore
,
V. V.
Fomenko
,
D.
Bodlaki
, and
E.
Borguet
,
Appl. Phys. Lett.
98
,
041905
(
2011
).
14.
T.
Heinz
,
M.
Loy
, and
W.
Thompson
,
Phys. Rev. Lett.
54
,
63
(
1985
).
15.
J.
Dadap
,
Z.
Xu
,
X.
Hu
,
M.
Downer
,
N.
Russell
,
J.
Ekerdt
, and
O.
Aktsipetrov
,
Phys. Rev. B
56
,
13367
(
1997
).
16.
M.
Yilmaz
,
A.
Rajagopal
, and
F.
Zimmermann
,
Phys. Rev. B
69
,
125413
(
2004
).
17.
T.
Zundel
,
A.
Mesli
,
J. C.
Muller
, and
P.
Siffert
,
Appl. Phys. A
48
,
31
(
1989
).
18.
X. L.
Jiang
,
Y. L.
He
, and
H. L.
Zhu
,
J. Phys.: Condens. Matter
6
,
713
(
1994
).
19.
N.
Nickel
,
W.
Jackson
,
I.
Wu
,
C.
Tsai
, and
A.
Chiang
,
Phys. Rev. B
52
,
7791
(
1995
).
20.
R. E.
Pritchard
,
J. H.
Tucker
,
R. C.
Newman
, and
E. C.
Lightowlers
,
Semicond. Sci. Technol.
14
,
77
(
1999
).
21.
N.
Fukata
,
S.
Fukuda
,
S.
Sato
,
K.
Ishioka
,
M.
Kitajima
,
S.
Hishita
, and
K.
Murakami
,
Physica B
376–377
,
85
(
2006
).
22.
J.
Maserjian
,
J. Vac. Sci. Technol.
11
,
996
(
1974
).
23.
S.-H.
Lo
,
D. A.
Buchanan
,
Y.
Taur
, and
W.
Wang
,
IEEE Electron Device Lett.
18
,
209
(
1997
).
24.
J.
Robertson
,
Rep. Prog. Phys.
69
,
327
(
2006
).
25.
A.
Yassine
and
R.
Hijab
, in
1997 IEEE International Integrated Reliability Workshop Final Report
(
IEEE
,
1997
), pp.
56
61
.
26.
L.
Vandelli
,
A.
Padovani
,
L.
Larcher
,
R. G.
Southwick
,
W. B.
Knowlton
, and
G.
Bersuker
, in
2010 Proceedings of the European Solid-State Device Research Conference (ESSDERC)
(
IEEE
,
2010
), pp.
388
391
.
27.
F.
Maier
,
M.
Riedel
,
B.
Mantel
,
J.
Ristein
, and
L.
Ley
,
Phys. Rev. Lett.
85
,
3472
(
2000
).
28.
A.
Andriotis
,
G.
Mpourmpakis
,
E.
Richter
, and
M.
Menon
,
Phys. Rev. Lett.
100
,
106801
(
2008
).
29.
E.
Napolitani
,
D.
De Salvador
,
R.
Storti
,
A.
Carnera
,
S.
Mirabella
, and
F.
Priolo
,
Phys. Rev. Lett.
93
,
055901
(
2004
).
30.
E.
Napolitani
,
D.
De Salvador
,
M.
Pesce
,
A.
Carnera
,
S.
Mirabella
, and
F.
Priolo
,
J. Vac. Sci. Technol. B
24
,
394
(
2006
).
31.
E.
Collart
,
Nucl. Instrum. Methods Phys. Res. B
139
,
98
(
1998
).
32.
O. Y.
Anan'yina
and
A. S.
Yanovs'ky
,
Bull. Russ. Acad. Sci. Phys.
72
,
592
(
2008
).
33.
H.
Philipp
and
E.
Taft
,
Phys. Rev.
120
,
37
(
1960
).
34.
Y. J.
Oh
,
H.-K.
Noh
, and
K. J.
Chang
,
Physica B
407
,
2989
(
2012
).
35.
Y. J.
Oh
,
J.-H.
Hwang
,
H.-K.
Noh
,
J.
Bang
,
B.
Ryu
, and
K. J.
Chang
,
Microelectron. Eng.
89
,
120
(
2012
).
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