We report on incorrect carrier type identification achieved by Hall effect measurements performed on ZnO films grown by pulsed laser deposition on InP substrates and subsequently annealed for 1 h at 600 °C in air. While Hall measurements, after post-growth annealing, reveal a change in the electrical properties of the films, from n-type to p-type, both photocurrent-based and standard C−V measurements performed on the same samples show no change in the native n-type doping of the ZnO films. A possible interpretation of the two results is reported. In particular, p-type conductivity observed by Hall effect may be ascribed to a highly conductive thin layer formed during the annealing process at the ZnO/InP interface, which dominates the Hall effect measurements and does not influence the photo-electrochemical behavior of ZnO as well as the measured differential capacitance. The conflicting results here reported show that for this kind of samples, Hall effect measurement can be misleading with respect to the real nature of the analyzed material, instead both C−V and photocurrent-based characterization techniques are more reliable and therefore could be alternatively used when particularly ambiguous results are expected by Hall effect measurements.

1.
L. J.
van der Pauw
,
Philips Res. Rep.
13
,
1
(
1958
).
2.
C.
Klingshirn
,
J.
Fallert
,
H.
Zhou
,
J.
Sartor
,
C.
Thiele
,
F.
Maier-Flaig
,
D.
Schneider
, and
H.
Kalt
,
Phys. Status Solidi B
247
,
1424
(
2010
).
3.
A.
Janotti
and
C. G.
Van de Walle
,
Appl. Phys. Lett.
87
,
122102
(
2005
).
4.
M. D.
McCluskey
and
S. J.
Jokela
,
J. Appl. Phys.
106
,
071101
(
2009
).
5.
D. C.
Look
,
D. C.
Reynolds
,
C. W.
Litton
,
R. L.
Jones
,
D. B.
Eason
, and
G.
Cantwell
,
Appl. Phys. Lett.
81
,
1830
(
2002
).
6.
Z.
Xiao
,
Y.
Liu
,
J.
Zhang
,
D.
Zhao
,
Y.
Lu
,
D.
Shen
, and
X.
Fan
,
Semicond. Sci. Technol.
20
,
796
(
2005
).
7.
Y.-S.
Choi
,
J.-W.
Kang
,
D.-K.
Hwang
, and
S.-J.
Park
,
IEEE Trans. Electron Devices
57
,
26
(
2010
).
8.
Z. P.
Wei
,
Y. M.
Lu
,
D. Z.
Shen
,
Z. Z.
Zhang
,
B.
Yao
,
B. H.
Li
,
J. Y.
Zhang
,
D. X.
Zhao
,
X. W.
Fan
, and
Z. K.
Tang
,
Appl. Phys. Lett.
90
,
042113
(
2007
).
9.
Y. R.
Ryu
,
J. A.
Lubguban
,
T. S.
Lee
,
H. W.
White
,
T. S.
Jeong
,
C. J.
Youn
, and
B. J.
Kim
,
Appl. Phys. Lett.
90
,
131115
(
2007
).
10.
M.
Willander
,
O.
Nur
,
Q. X.
Zhao
,
L. L.
Yang
,
M.
Lorenz
,
B. Q.
Cao
,
J.
Zuniga Pérez
,
C.
Czekalla
,
G.
Zimmermann
,
M.
Grundmann
,
A.
Bakin
,
A.
Behrends
,
M.
Al-Suleiman
,
A.
El-Shaer
,
A.
Che Mofor
,
B.
Postels
,
A.
Waag
,
N.
Boukos
,
A.
Travlos
,
H. S.
Kwack
,
J.
Guinard
, and
D.
Le Si Dang
,
Nanotechnology
20
,
332001
(
2009
).
11.
A. B.
Djurisic
,
A. M. C.
Ng
, and
X. Y.
Chen
,
Prog. Quantum Electron.
34
,
191
(
2010
).
12.
M.
Mosca
,
R.
Macaluso
,
C.
Calì
,
R.
Butté
,
S.
Nicolay
,
E.
Feltin
,
D.
Martin
, and
N.
Grandjean
, “
Optical, structural, and morphological characterisation of epitaxial ZnO films grown by pulsed-laser deposition
,”
Thin Solid Films
(to be published).
13.
M.
Yamaguchi
,
C.
Uemura
, and
A.
Yamamoto
,
J. Appl. Phys.
55
,
1429
(
1984
).
14.
Y. S.
Ocak
,
M.
Kulakci
,
R.
Turan
,
T.
Kilicoglu
, and
O.
Gullu
,
J. Alloys Compd.
509
,
6631
(
2011
).
15.
C. K.
To
,
B.
Yang
,
S. C.
Su
,
C. C.
Ling
,
C. D.
Beling
, and
S.
Fung
,
J. Appl. Phys.
110
,
113521
(
2011
).
16.
K.-K.
Kim
,
H.-S.
Kim
,
D.-K.
Hwang
,
J.-H.
Lim
, and
S.-J.
Park
,
Appl. Phys. Lett.
83
,
63
(
2003
).
17.
D. Q.
Yu
,
L. Z.
Hu
,
J.
Li
,
H.
Hu
,
H. Q.
Zhang
,
J. M.
Bian
,
J. X.
Zhu
,
S. S.
Qiao
,
X.
Chen
, and
B.
Wang
,
Appl. Surf. Sci.
255
,
4430
(
2009
).
18.
A.
Mandal
and
S.
Chakrabarti
,
Proc. SPIE
7603
,
76031P
(
2010
).
19.
Y. R.
Riu
,
S.
Zhu
,
J. M.
Wrobel
,
H. M.
Jeong
,
P. F.
Miceli
, and
H. W.
White
,
J. Cryst. Growth
216
,
330
(
2000
).
20.
C.
Calì
,
R.
Macaluso
, and
M.
Mosca
,
Spectrochim. Acta, Part B
56
,
743
(
2001
).
21.
C.
Calì
,
F.
Cornacchia
,
A.
Di Lieto
,
F.
Marchetti
, and
M.
Tonelli
,
Opt. Mater.
31
,
1331
(
2009
).
22.
D. C.
Look
and
B.
Claflin
,
Phys. Status Solidi B
241
,
624
(
2004
).
23.
O.
Bierwagen
,
T.
Ive
,
C. G.
Van de Walle
, and
J. S.
Speck
,
Appl. Phys. Lett.
93
,
242108
(
2008
).
24.
T. W.
Kim
and
Y. S.
Yoon
,
J. Cryst. Growth
212
,
411
(
2000
).
25.
F.
Di Quarto
,
F.
La Mantia
, and
M.
Santamaria
,
Modern Aspects of Electrochemistry, No. 46: Progress in Corrosion Science and Engineering I
, edited by
S.-I.
Pyun
and
J.-W.
Lee
(
Springer
,
New York
,
2009
), pp.
231
316
.
26.
X. M.
Fan
,
J. S.
Lian
,
Z. X.
Guo
, and
H. J.
Lu
,
J. Cryst. Growth
279
,
447
(
2005
).
27.
M.
Pourbaix
,
Atlas of Electrochemical Equilibria in Aqueous Solutions
(
Pergamon Press
,
Oxford
,
1966
).
28.
J. F.
Dewald
,
J. Phys. Chem. Solids
14
,
155
(
1960
).
29.
F.
La Mantia
,
H.
Habazaki
,
M.
Santamaria
, and
F.
Di Quarto
,
Russ. J. Electrochem.
46
,
1306
(
2010
).
30.
Handbook of Chemistry and Physics
, edited by
D. R.
Lide
, 89th ed. (
CRC Press
,
New York
,
2008
).
31.
S.
Jang
,
J.-J.
Chen
,
B. S.
Kang
,
F.
Ren
,
D. P.
Norton
,
S. J.
Pearton
,
J.
Lopata
, and
W. S.
Hobson
,
Appl. Phys. Lett.
87
,
222113
(
2005
).
32.
C. H.
Park
,
S. B.
Zhang
, and
S.-H.
Wei
,
Phys. Rev. B
66
,
073202
(
2002
).
33.
C. B.
Park
and
K.
Kim
,
J. Appl. Phys.
83
,
1327
(
1998
).
34.
S.
He
and
Y.
Zhao
,
Semicond. Sci. Technol.
20
,
149
(
2005
).
35.
C.
Kazmierski
,
J. Appl. Phys.
64
,
6573
(
1988
).
36.
A. J.
Howard
,
B.
Pathangey
,
Y.
Hayakawa
,
T. J.
Anderson
,
C.
Blaauw
, and
A. J.
SpringThorpe
,
Semicond. Sci. Technol.
18
,
723
(
2003
).
37.
J. L.
Zhao
,
X. M.
Li
,
A.
Krtschil
,
A.
Krost
,
W. D.
Yu
,
Y. W.
Zhang
,
Y. F.
Gu
, and
X. D.
Gao
,
Appl. Phys. Lett.
90
,
062118
(
2007
).
38.
H.
Zheng
,
X. L.
Du
,
Q.
Luo
,
J. F.
Jia
,
C. Z.
Gu
, and
Q. K.
Xue
,
Thin Solid Films
515
,
3967
(
2007
).
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