The influences of polarization and structure parameters on the intersubband transition frequency within terahertz (THz) range and oscillator strength in GaN/AlGaN step quantum well have been investigated by solving Schrödinger and Poisson equations self-consistently. The results show that the Al mole compositions of step quantum well and space barrier have a significant effect on the THz intersubband transition frequency. A specific phenomenon is found that the minimum energy spacing between the ground state and first excited state can be achieved as the Al mole composition of space barrier is about twice of that of step well. In particular, an intersubband transition with energy of 19.8 meV (4.83 THz) can be obtained with specifically designed parameters. This specific phenomenon still exists in a wide range of step well width and a narrow range of well width with less than 3% fluctuation of the Al mole composition of barrier. In addition, oscillator strength and dipole matrix element versus the widths of well and step well, the influences of doping location and concentration on the absorption coefficient, are also investigated in detail in this study. The results should be of benefit to the design of devices operating in the THz frequency range.
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21 April 2013
Research Article|
April 18 2013
Terahertz intersubband transition in GaN/AlGaN step quantum well
F. Wu;
F. Wu
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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W. Tian;
W. Tian
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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W. Y. Yan;
W. Y. Yan
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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J. Zhang;
J. Zhang
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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S. C. Sun;
S. C. Sun
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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J. N. Dai;
J. N. Dai
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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Y. Y. Fang;
Y. Y. Fang
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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Z. H. Wu;
Z. H. Wu
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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C. Q. Chen
C. Q. Chen
a)
Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology
, Wuhan 430074, People's Republic of China
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a)
Author to whom correspondence should be addressed. Electronic mail: cqchen@mail.hust.edu.cn
J. Appl. Phys. 113, 154505 (2013)
Article history
Received:
January 13 2013
Accepted:
April 03 2013
Citation
F. Wu, W. Tian, W. Y. Yan, J. Zhang, S. C. Sun, J. N. Dai, Y. Y. Fang, Z. H. Wu, C. Q. Chen; Terahertz intersubband transition in GaN/AlGaN step quantum well. J. Appl. Phys. 21 April 2013; 113 (15): 154505. https://doi.org/10.1063/1.4802496
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