The atomic-resolved reversal of the polarity across an antiphase boundary (APB) was observed in GaSb films grown on Si by high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM). The investigation of the interface structure at the origin of the APB reveals that coalescence of two domains with Ga-prelayer and Sb-prelayer causes the sublattice reversal. The local strain and lattice rotation distributions of the APB, attributed to the discordant bonding length at the APB with the surrounding GaSb lattice, were further studied using the geometric phase analysis technique. The crystallographic characteristics of the APBs and their interaction with other planar defects were observed with HAADF-STEM. The quantitative agreement between experimental and simulated images confirms the observed polarities in the acquired HAADF-STEM data. The self-annihilation mechanism of the APBs is addressed based on the rotation induced by anti-site bonds and APBs' faceting.

1.
S.
Hosseini Vajargah
,
M.
Couillard
,
K.
Cui
,
S.
Ghanad Tavakoli
,
B.
Robinson
,
R. N.
Kleiman
,
J. S.
Preston
, and
G. A.
Botton
,
Appl. Phys. Lett.
98
,
082113
(
2011
).
2.
N.-H.
Cho
,
B. C.
De Cooman
,
C. B.
Carter
,
R.
Fletcher
, and
D. K.
Wagner
,
Appl. Phys. Lett.
47
(
8
),
879
881
(
1985
).
3.
O.
Ueda
,
T.
Soga
,
T.
Jimbo
, and
M.
Umeno
,
Appl. Phys. Lett.
55
(
5
),
445
447
(
1989
).
4.
D.
Cohen
and
C. B.
Carter
,
J. Microsc.
208
(
2
),
84
99
(
2002
).
5.
D. B.
Holt
,
J. Phys. Chem. Solids
30
,
1297
1308
(
1969
).
6.
P. M.
Petroff
,
J. Vac. Sci. Technol. B
4
(
4
),
874
877
(
1986
).
7.
D.
Vanderbilt
and
C.
Lee
,
Phys. Rev. B
45
(
19
),
11192
11201
(
1992
).
8.
O.
Rubel
and
S. D.
Baranovskii
,
Int. J. Mol. Sci.
10
,
5104
5114
(
2009
).
9.
W. R.
Lambrecht
,
C.
Amador
, and
B.
Segall
,
Phys. Rev. Lett.
68
(
9
),
1363
1366
(
1992
).
10.
S. N. G.
Chu
,
S.
Nakahara
,
S. J.
Pearton
,
T.
Boone
, and
S. M.
Vernon
,
J. Appl. Phys.
64
(
6
),
2981
2989
(
1988
).
11.
I.
Németh
,
B.
Kunert
,
W.
Stolza
, and
K.
Volz
,
J. Cryst. Growth
310
,
1595
1601
(
2008
).
12.
K.
Volz
,
A.
Beyer
,
W.
Witte
,
J.
Ohlmann
,
I.
Németh
,
B.
Kunert
, and
W.
Stolz
,
J. Cryst. Growth
315
,
37
47
(
2011
).
13.
A.
Beyer
,
I.
Németh
,
S.
Liebich
,
J.
Ohlmann
,
W.
Stolz
, and
K.
Volz
,
J. Appl. Phys.
109
,
083529
(
2011
).
14.
S.
Koh
,
T.
Kondo
,
T.
Ishiwada
,
H.
Sawada
,
H.
Ichinose
,
I.
Shoji
, and
R.
Ito
,
Physica E
7
,
876
880
(
2000
).
15.
A.
Georgakilas
,
J.
Stoemenos
,
K.
Tsagaraki
,
P.
Komninou
,
N.
Flevaris
,
P.
Panayotatos
, and
A.
Christou
,
J. Mater. Res.
8
(
8
),
1908
1921
(
1993
).
16.
S. I.
Molina
,
G.
Aragon
,
R.
Garcia
,
Y.
Gonzalez
,
L.
Gonzalez
, and
F.
Briones
,
J. Electron. Mater.
22
(
5
),
567
572
(
1993
).
17.
H.
Kawanami
,
A.
Hatayama
, and
Y.
Hayashi
,
J. Electron. Mater.
17
(
5
)
341
349
(
1988
).
18.
Y.
Li
,
L.
Lazzarini
,
L. J.
Giling
, and
G.
Salviati
,
J. Appl. Phys.
76
(
10
),
5748
5753
(
1994
).
19.
Y.
Li
,
G.
Salviati
,
M. M. G.
Bongers
,
L.
Lazzarini
, and
L.
Nasi
,
J. Cryst. Growth
163
,
195
202
(
1996
).
20.
S. M.
Ting
and
E. A.
Fitzgerald
,
J. Appl. Phys.
87
,
2618
2628
(
2000
).
21.
M.
Kawabe
,
T.
Ueda
, and
H.
Takasugi
,
Jpn. J. Appl. Phys., Part 2
26
(
6
),
L944
L946
(
1987
).
22.
L.
Lazzarini
,
L.
Nasi
,
G.
Salviati
,
C. Z.
Fregonara
,
Y.
Li
,
L. J.
Giling
,
C.
Hardingham
, and
D. B.
Holt
,
Micron
31
,
217
222
(
2000
).
23.
M. K.
Hudait
and
S. B.
Krupanidhi
,
J. Appl. Phys.
89
(
11
),
5972
5979
(
2001
).
24.
T.
Soga
,
H.
Nishikawa
,
T.
Jimbo
, and
M.
Umeno
,
Jpn. J. Appl. Phys.
, Part 1
32
,
4912
4915
(
1993
).
25.
H.
Kroemer
,
J. Cryst. Growth
81
,
193
204
(
1987
).
26.
H.
Kroemer
,
J. Vac. Sci. Technol. B
5
,
1150
1154
(
1987
).
27.
B.
Kunert
,
I.
Németh
,
S.
Reinhard
,
K.
Volz
, and
W.
Stolz
,
Thin Solid Films
517
,
140
143
(
2008
).
28.
H.
Noge
,
H.
Kano
,
M.
Hashimoto
, and
L.
Igarashi
,
J. Appl. Phys.
64
(
4
),
2246
2248
(
1988
).
29.
K.
Nauka
,
G. A.
Reid
, and
Z.
Liliental-Weber
,
Appl. Phys. Lett.
56
(
4
),
376
378
(
1990
).
30.
D. B.
Holt
and
B. G.
Yacobi
,
Extended Defects in Semiconductors: Electronic Properties, Device Effects and Structures
(
Cambridge University Press
,
2007
).
31.
J.
Taftø
and
J. C. H.
Spence
,
J. Appl. Cryst.
15
,
60
64
(
1982
).
32.
P.
Pirouz
,
C. M.
Chorey
, and
J. A.
Powell
,
Appl. Phys. Lett.
50
(
4
),
221
223
(
1987
).
33.
N.-H.
Cho
and
C. B.
Carter
,
J. Mater. Sci.
36
,
4209
4222
(
2001
).
34.
T. S.
Kuan
and
C.-A.
Chang
,
J. Appl. Phys.
54
(
8
),
4408
4413
(
1983
).
35.
D.
Cohen
and
C. B.
Carter
,
Mater. Res. Soc. Symp. Proc.
442
,
503
508
(
1996
).
36.
J. W.
Edington
,
Practical Electron Microscopy in Materials Science
(
Van Nostrand Reinhold Co.
,
New York
,
1976
).
37.
K.
Morizane
,
J. Cryst. Growth
38
,
249
254
(
1977
).
38.
D. R.
Rasmussen
,
N.-H.
Cho
,
D. W.
Susnitzky
, and
C. B.
Carter
,
Ultramicroscopy
30
(
1–2
),
27
32
(
1989
).
39.
D. R.
Rasmussen
,
S.
McKernan
, and
C. B.
Carter
,
Phys. Rev. Lett.
66
,
2629
2632
(
1991
).
40.
N.-H.
Cho
,
S.
McKernan
,
D. K.
Wagner
, and
C. B.
Carter
,
J. Phys. Colloques
49
,
C5
245
C5
250
(
1988
).
41.
V.
Narayanan
,
S.
Mahajan
,
K. J.
Bachmann
,
V.
Woods
, and
N.
Dietz
,
Acta Mater.
50
,
1275
1287
(
2002
).
42.
F.
Ernst
and
P.
Pirouz
,
J. Mater. Res.
4
(
4
),
834
842
(
1989
).
43.
Z.
Liliental-Weber
,
E.R.
Weber
,
L.
Parechanian-Allen
, and
J.
Washburn
,
Ultramicroscopy
26
,
59
64
(
1988
).
44.
Z.
Liliental-Weber
,
M. A.
O'Keefe
, and
J.
Washburn
,
Ultramicroscopy
30
,
20
26
(
1989
).
45.
S. H.
Huang
,
G.
Balakrishnan
,
A.
Khoshakhlagh
,
L. R.
Dawson
, and
D. L.
Huffaker
,
Appl. Phys. Lett.
93
,
071102
(
2008
).
46.
P. D.
Nellist
, in
Science of Microscopy
, edited by
P. H.
Hawkes
and
J. C. H.
Spence
(
Springer
,
New York
,
2007
), pp.
65
132
.
47.
K. A.
Mkhoyan
,
P. E.
Batson
,
J.
Cha
,
W. J.
Schaff
, and
J.
Silcox
,
Science
312
,
1354
(
2006
).
48.
E. J.
Kirkland
,
Advanced Computing in Electron Microscopy
(
Plenum
,
New York
,
1998
).
49.
M. J.
Hÿtch
,
E.
Snoeck
, and
R.
Kilaas
,
Ultramicroscopy
74
,
131
(
1998
).
50.
S. Y.
Woo
,
S.
Hosseini Vajargah
,
S.
Ghanad-Tavakoli
,
R. N.
Kleiman
, and
G. A.
Botton
,
J. Appl. Phys.
112
,
074306
(
2012
).
51.
S. F.
Fang
,
K.
Adomi
,
S.
Iyer
,
H.
Morkoç
, and
H.
Zabel
,
J. Appl. Phys.
68
(
7
),
R31
R58
(
1990
).
52.
R. D.
Bringans
,
D. K.
Biegelsen
, and
L. E.
Swartz
,
Phys. Rev. B
44
(
7
),
3054
3063
(
1991
).
53.
G. A.
Devenyi
,
S. Y.
Woo
,
S.
Ghanad-Tavakoli
,
R. A.
Hughes
,
R. N.
Kleiman
,
G. A.
Botton
, and
J. S.
Preston
,
J. Appl. Phys.
110
,
124316
(
2011
).
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