The paper presents the experiments regarding a Schottky diode fabricated on a graphene monolayer using asymmetric metallic contacts. The current is in the mA range, which is with orders of magnitude higher than for reported Schottky diodes prepared on graphene bilayers or related graphene materials. Moreover, this device exhibits a DC controllable phase shift of more than 20 degrees in the range 40–65 GHz.
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2012
American Institute of Physics
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