A noise characteristics model is presented for short wavelength infrared (SWIR) focal plane arrays (FPAs). The model shows the relationship between noise and varying integration time. The experimental results for different SWIR InGaAs linear FPAs in the 1.0–1.7 μm and 1.0–2.4 μm spectral range can be well fitted by this model. The noise of InGaAs FPAs with the conventional process in the 1.0–1.7 μm spectral range is determined by the shot noise from the photodiode, which provides a direction for reducing the noise of FPAs. The noise of InGaAs FPAs with the improved process in the 1.0–1.7 μm spectral range is determined by the noise from the readout integrated circuit (ROIC), which is due to the lower shot noise from the dark current of the photodiode. The noise of InGaAs FPAs in the 1.0–2.4 μm spectral range shows a transition from the fixed-pattern noise to the shot noise with a decrease of temperature as indicated by the model. This reduction is mainly due to the higher dark current of photodiodes and the non-uniformity of the dark current. It could be expected that the noise characteristics model is appropriate for the other infrared FPAs. Further, gain constants and conversion efficiencies of the ROIC are obtained according to a signal to noise relationship of the FPAs.

Topics
Electric currents, Diffusion current, Semiconductors, Electrical properties and parameters, Integrated circuits, P-N junctions, Photodiodes, Focal plane arrays, Electronic noise, Epitaxy
1.
K. P.
 
Judd
,
J. M.
 
Nichols
,
J. G.
 
Howard
 et al., “
Passive shortwave infrared broadband and hyperspectral imaging in a maritime environment[J]
,”
Opt. Eng.
 
51
(
1
),
013202
–
1
013202
–
13
(
2012
).
https://doi.org/10.1117/1.OE.51.1.013202
Google Scholar
Crossref
Search ADS
 
2.
M.
 
MacDougal
,
J.
 
Geske
,
C.
 
Wang
 et al., “
Low dark current InGaAs detector arrays for night vision and astronomy[C]
,”
Proc. SPIE
 
7298
(
1
),
72983F
–
1
72983F
–
10
(
2009
).
Google Scholar
 
3.
H.
 
Yuan
,
G.
 
Apgar
,
J.
 
Kim
 et al., “
FPA development: From InGaAs, InSb, to HgCdTe[C]
,”
Proc. SPIE
 
6940
,
69403C
–
1
69403C
–
11
(
2008
).
https://doi.org/10.1117/12.782735
Google Scholar
Crossref
Search ADS
 
4.
R. W. M.
 
Hoogeveen
,
A. R. J.
 
Vander
, and
P. H.
 
Goede
, “
Extended wavelength InGaAs infrared (1.0–2.4 μm) detector arrays on SCIAMACHY for space-based spectrometry of the Earth atmosphere[J]
,”
Infrared Phys. Technol.
 
42
,
1
–
16
(
2001
).
https://doi.org/10.1016/S1350-4495(00)00061-X
Google Scholar
Crossref
Search ADS
 
5.
M.
 
MacDougal
,
J.
 
Geske
,
C.
 
Wang
 et al., “
Short-wavelength infrared imaging using low dark current InGaAs detector arrays and vertical-cavity surface-emitting laser illuminators[J]
,”
Opt. Eng.
 
50
(
6
),
061011
–
1
061011
–
7
(
2011
).
https://doi.org/10.1117/1.3579520
Google Scholar
Crossref
Search ADS
 
6.
M. D.
 
Enriquez
,
M. A.
 
Blessinger
,
J. V.
 
Groppe
 et al., “
Performance of high resolution visible-InGaAs imager for day/night vision[C]
,”
Proc. SPIE
 
6940
,
69400O
–
1
69400O
–
9
(
2008
).
https://doi.org/10.1117/12.778310
Google Scholar
Crossref
Search ADS
 
7.
P. M.
 
Ferreira
,
J.
 
Gabriel
,
R. C.
 
Gomes
 et al., “
Current mode read-out circuit for InGaAs photodiode applications[J]
,”
Microelectron. J.
 
41
,
388
–
394
(
2010
).
https://doi.org/10.1016/j.mejo.2010.04.010
Google Scholar
Crossref
Search ADS
 
8.
X.
 
Li
,
H. J.
 
Tang
,
G. Y.
 
Fan
 et al., “
256 × 1 element linear InGaAs short wavelength near-infrared detector arrays[C]
,”
Proc. SPIE
 
6835
,
683505
–
1
683505
–
8
(
2007
).
https://doi.org/10.1117/12.755599
Google Scholar
Crossref
Search ADS
 
9.
J.
 
Janesick
,
Scientific Charge-Coupled Devices[M]
(
SPIE, Bellingham
,
Washington
,
2001
), Chap. 2, pp.
101
–
105
.
Google Scholar
Crossref
Search ADS
 
© 2012 American Institute of Physics.
2012
American Institute of Physics
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