Processes for making well ordered L10 FePt thin films with root-mean-square surface roughness close to 0.4 nm, perpendicular anisotropy greater than 5 kOe and perpendicular squareness near 1 using a deposition temperature of 390 °C have been developed. In this study, we focused on reducing the ordering temperature and smoothness of L10 FePt films, while achieving good perpendicular magnetic properties by using MgO/CrRu/TiN or MgO/CrRu/Pt seed layers on Si/SiO2 substrates. It was found that the chemical ordering of L10 FePt films is strongly affected by the insertion of a sputtered MgO seed layer, and the CrRu (002) texture on a (002) textured MgO seed layer is substantially improved at high DC power. In order to prevent Cr diffusion, TiN and Pt films were inserted between the CrRu and FePt films. It was found that the smoothness, L10 FePt ordering, and perpendicular magnetic properties were strongly improved by the TiN barrier layer compared to the Pt barrier layer. Increased TiN thickness improved the perpendicular magnetic anisotropy due to the reduced lattice misfit between the CrRu and L10 FePt films.

1.
H.
Zeng
,
M. L.
Yan
,
N.
Powers
, and
D. J.
Sellmyer
, “
Orientation-controlled nonepitaxial L10 CoPt and FePt films
,”
Appl. Phys. Lett.
80
,
2350
2352
(
2002
).
2.
A.
Sun
,
P. C.
Kuo
,
J.
Hsu
,
H. L.
Huang
, and
J.
Sun
, “
Epitaxial growth mechanism of L10 FePt thin films on Pt/Cr bilayer with amorphous glass substrate
,”
J. Appl. Phys.
98
,
076109
(
2005
).
3.
J.-E.
Sundgren
, “
Structure and properties of TiN coatings
,”
Thin Solid Films
128
,
21
24
(
1985
).
4.
J. M.
Poitevin
,
G.
Lemperiere
, and
J.
Tardy
, “
Influence of substrate bias on the composition structure and electrical properties of reactively DC sputtered TiN Films
,”
Thin Solid Films
97
,
69
77
(
1982
).
5.
B. O.
Johansson
,
J.-E.
Sundgren
,
J. E.
Greene
,
A.
Rockett
, and
S. A.
Barnett
, “
Growth and properties of single crystal TiN films deposited by reactive magnetron sputtering
,”
J. Vac. Sci. Technol. A
3
,
303
(
1985
).
6.
D.
Pramanik
and
V.
Jain
, “
Barrier metals for ULSI: Deposition and Manufacturing
,”
Solid State Technol.
36
,
73
(
1993
).
7.
E.
Yang
,
S.
Ratanaphan
,
D. E.
Laughlin
, and
J.
Zhu
, “
Highly Ordered FePt L10 thin films with small grains on RuAl seed layers
,”
IEEE Trans. Magn.
47
(
1
),
81
(
2011
).
8.
C. S.
Kim
,
J. J.
Sapan
,
S.
Moyerman
,
K.
Lee
,
E. E.
Fullerton
, and
M. H.
Kryder
, “
Thickness and temperature effects on magnetic properties and roughness of L10-ordered FePt Films
,”
IEEE Trans. Magn.
46
(
6
),
2282
(
2010
).
9.
C. V.
Thompson
, “
Structure evolution during processing of polycrystalline films
,”
Annu. Rev. Mater. Sci.
30
,
159
190
(
2000
).
10.
J. S.
Chen
,
Y.
Xu
, and
J. P.
Wang
, “
Effect of Pt buffer layer on structural and magnetic properties of FePt thin films
,”
J. Appl. Phys.
93
(
3
),
1661
(
2003
).
11.
U. C.
Oh
and
J. H.
Je
, “
Effects of strain energy on the preferred orientation of TiN thin films
,”
J. Appl. Phys.
74
,
1692
(
2005
).
12.
J. E.
Greene
,
J.
Sundgren
,
L.
Hultman
,
I.
Petrov
,
D. B.
Bergstrom
, “
Development of preferred orientation in polycrystalline TiN layers grown by ultrahigh vacuum reactive magnetron sputtering
,”
Appl. Phys. Lett.
67
,
2928
(
1995
).
You do not currently have access to this content.