We present a novel imaging method for measuring the position and magnetic moment of single micrometer scale particles. Our technique is based on magnetic force microscopy (MFM) with a magnetically hard magnetic tip in a uniform opposing field. By translating the MFM probe tip laterally and vertically, the local magnetic field at a particle can be precisely controlled. Our technique is similar to magnetic particle imaging, where the harmonic response of a particle to an AC field is measured; the difference is that here, the response is measured with a cantilever instead of a detector coil. We are able to precisely determine individual particle positions to within +/−0.022 μm in a composite sample. In addition, by fitting the force derivative images taken at different distances above the sample and at different applied magnetic fields, we can determine the m-H characteristics of individual particles.
Skip Nav Destination
Article navigation
15 July 2012
Research Article|
July 23 2012
Magnetic particle imaging with a cantilever detector
Jacob W. Alldredge;
Jacob W. Alldredge
Electromagnetics Division, National Institute of Standards and Technology
, Boulder, Colorado 80305, USA
Search for other works by this author on:
John Moreland
John Moreland
Electromagnetics Division, National Institute of Standards and Technology
, Boulder, Colorado 80305, USA
Search for other works by this author on:
J. Appl. Phys. 112, 023905 (2012)
Article history
Received:
May 03 2012
Accepted:
June 20 2012
Citation
Jacob W. Alldredge, John Moreland; Magnetic particle imaging with a cantilever detector. J. Appl. Phys. 15 July 2012; 112 (2): 023905. https://doi.org/10.1063/1.4737608
Download citation file:
Sign in
Don't already have an account? Register
Sign In
You could not be signed in. Please check your credentials and make sure you have an active account and try again.
Pay-Per-View Access
$40.00
Citing articles via
A step-by-step guide to perform x-ray photoelectron spectroscopy
Grzegorz Greczynski, Lars Hultman
Celebrating notable advances in compound semiconductors: A tribute to Dr. Wladyslaw Walukiewicz
Kirstin Alberi, Junqiao Wu, et al.
GaN-based power devices: Physics, reliability, and perspectives
Matteo Meneghini, Carlo De Santi, et al.