Simulation of metal-semiconductor-metal devices on heavily compensated Cd_0.9Zn_0.1Te

This study focuses on finite-element calculations of the electrical properties of metal-semiconductor-metal devices processed on heavily compensated, high resistivity, Cd_0.9Zn_0.1Te crystals. Deep and shallow levels used in the calculations were taken from published experimental results. Several compensation configurations, yielding similar resistivities were investigated. The capture cross-sections of the deep traps were introduced as an additional parameter. It is shown that with pure-Ohmic contacts the characteristics of Metal-Semiconductor-Metal devices are similar to the non-compensated case. With Schottky contacts it is shown that the device characteristics greatly depend on the compensation level and on capture cross section, yielding anything from Ohmic-like behavior to Schottky-like characteristics. Furthermore, it is shown that Schottky contacts and rectifying I-V behavior do not imply classical Schottky electric field and space charge distributions.