The hysteretic properties of metal-ferroelectric-semiconductor (MFS) structures based on Pb(Zr0.2Ti0.8)O3 (PZT) and ZnO films were studied with respect of the quality of the PZT-ZnO interface. The films were grown by pulsed laser deposition (PLD) on platinized silicon (Pt/Si) substrate and on single crystal, (001) oriented SrTiO3 (STO) substrates. The structural analysis has revealed that the PZT-ZnO stack grown on single crystal STO is epitaxial, while the structure grown on Pt/Si has columnar texture. The temperature change of the capacitance-voltage (C-V) hysteresis direction, from clockwise at low temperatures to counter clockwise at high temperatures, was observed at around 300 K in the case of the MFS structure grown by PLD on Pt/Si substrate. This temperature is lower than the one reported for the case of the PZT-ZnO structure grown by sol-gel on Pt/Si substrate (Pintilie et al., Appl. Phys. Lett. 96, 012903 (2010)). In the fully epitaxial structures the C-V hysteresis is counter clockwise even at 100 K. These findings strongly points out that the quality of the PZT-ZnO interface is essential for having a C-V hysteresis of ferroelectric nature, with negligible influence from the part of the interface states and with a memory window of about 5 V at room temperature.
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15 November 2012
Research Article|
November 21 2012
The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure
I. Pintilie;
I. Pintilie
a)
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
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I. Pasuk;
I. Pasuk
a)
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
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G. A. Ibanescu;
G. A. Ibanescu
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
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R. Negrea;
R. Negrea
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
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C. Chirila;
C. Chirila
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
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E. Vasile;
E. Vasile
2
METAV-C.D.S.A.
, Rosetti Street No. 21, Bucharest 020011, Romania
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L. Pintilie
L. Pintilie
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
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I. Pintilie
1,a)
I. Pasuk
1,a)
G. A. Ibanescu
1
R. Negrea
1
C. Chirila
1
E. Vasile
2
L. Pintilie
1
1National Institute of Materials Physics, Atomistilor 105 bis, Magurele 077125,
Romania
2
METAV-C.D.S.A.
, Rosetti Street No. 21, Bucharest 020011, Romania
a)
These authors have equal contributions as first authors.
J. Appl. Phys. 112, 104103 (2012)
Article history
Received:
August 10 2012
Accepted:
October 17 2012
Citation
I. Pintilie, I. Pasuk, G. A. Ibanescu, R. Negrea, C. Chirila, E. Vasile, L. Pintilie; The impact of the Pb(Zr,Ti)O3-ZnO interface quality on the hysteretic properties of a metal-ferroelectric-semiconductor structure. J. Appl. Phys. 15 November 2012; 112 (10): 104103. https://doi.org/10.1063/1.4765723
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