The influence of oxygen precipitation on copper precipitation in Czochralski silicon was investigated by means of defect etching, optical microscopy, and Fourier transform infrared spectrometer. It was found that the density, distribution, and morphology of copper precipitation can be influenced by oxygen precipitate sequence significantly. The spherelike copper precipitates uniformly distributed along the whole cross section were generated only in the specimens oxygen precipitation at the very beginning of the heating treatment. While in the specimens, copper precipitation firstly, the large star-like precipitate colonies was generated due to the repeated nucleation mechanism. Additionally, the bulk microdefects (BMDs) density of the latter was higher than the former. The influence of oxygen precipitation nuclei, which was formed during 750 °C for 8 h annealing, on copper precipitation was similar to that of oxygen precipitation, indicated that the initial density and distribution of oxygen precipitation nuclei were the main factors to decided copper precipitation.
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1 May 2012
Research Article|
May 09 2012
Influence of oxygen precipitation on copper precipitation in Czochralski silicon Available to Purchase
Jin Xu;
Jin Xu
a)
1Department of Materials Science and Engineering, College of Materials,
Xiamen University
, Xiamen, Fujian 361005, People’s Republic of China
2
Fujian Provincial Key Laboratory of Fire Retardant Materials, Xiamen University
, Xiamen, Fujian 361005, People's Republic of China
3
State Key Laboratory of Silicon Materials, Zhejiang University
, Hangzhou 310027, People’s Republic of China
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Nating Wang;
Nating Wang
1Department of Materials Science and Engineering, College of Materials,
Xiamen University
, Xiamen, Fujian 361005, People’s Republic of China
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Deren Yang
Deren Yang
3
State Key Laboratory of Silicon Materials, Zhejiang University
, Hangzhou 310027, People’s Republic of China
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Jin Xu
1,2,3,a)
Nating Wang
1
Deren Yang
3
1Department of Materials Science and Engineering, College of Materials,
Xiamen University
, Xiamen, Fujian 361005, People’s Republic of China
2
Fujian Provincial Key Laboratory of Fire Retardant Materials, Xiamen University
, Xiamen, Fujian 361005, People's Republic of China
3
State Key Laboratory of Silicon Materials, Zhejiang University
, Hangzhou 310027, People’s Republic of China
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]. Tel.: +86-592-2180-775. FAX: +86-592-2183-937.
J. Appl. Phys. 111, 094907 (2012)
Article history
Received:
December 21 2011
Accepted:
March 22 2012
Citation
Jin Xu, Nating Wang, Deren Yang; Influence of oxygen precipitation on copper precipitation in Czochralski silicon. J. Appl. Phys. 1 May 2012; 111 (9): 094907. https://doi.org/10.1063/1.4705421
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