Growth of (111)-oriented BaTiO₃–Bi(Mg_0.5Ti_0.5)O₃ epitaxial films and their crystal structure and electrical property characterizations

Epitaxial (1−x)BaTiO₃−xBi(Mg_0.5Ti_0.5)O₃ films with x = 0 − 0.9 were grown on (111)cSrRuO₃//(111)SrTiO₃ substrates by pulsed laser deposition (PLD). Plotting the temperature where dielectric constant reaches a maximum {T[ɛ_r(max.)]} versus Bi(Mg_0.5,Ti_0.5)O₃ content present minimum at x = 0.1. On the other hand, the remanent polarization (Pr) and the effective transverse piezoelectric constant [d₃₃(eff.)] showed minimum at 0.1 and 0.2, respectively, but increased with the increase of x in (1−x)BaTiO₃−xBi(Mg_0.5Ti_0.5)O₃ above these values. These results show the simultaneous increase of T[ɛ_r(max.)] and d₃₃(eff.) for the films above x = 0.2 that normally showed treads off characteristics.