Three-step H₂Se/Ar/H₂S reaction of Cu-In-Ga precursors for controlled composition and adhesion of Cu(In,Ga)(Se,S)₂ thin films Available to Purchase

Control of the through-film composition and adhesion are critical issues for Cu(In,Ga)Se₂ (CIGS) and/or Cu(In,Ga)(Se,S)₂ (CIGSS) films formed by the reaction of Cu–In–Ga metal precursor films in H₂Se or H₂S. In this work, CIGSS films with homogenous Ga distribution and good adhesion were formed using a three-step reaction involving: (1) selenization in H₂Se at 400 °C for 60 min, (2) temperature ramp-up to 550 °C and annealing in Ar for 20 min, and (3) sulfization in H₂S at 550 °C for 10 min. The 1st selenization step led to fine grain microstructure with Ga accumulation near the Mo back contact, primarily in a Cu₉(In_1−xGa_x)₄ phase. The 2nd Ar anneal step produces significant grain growth with homogenous through-film Ga distribution and the formation of an InSe binary compound near the Mo back contact. The 3rd sulfization step did not result in any additional change in Ga distribution or film microstructure but a small S incorporation near the CIGSS film surface and complete reaction of InSe to form CIGSS were observed. The three-step process facilitates good control of the film properties by separating different effects of the reaction process and a film growth model is proposed. Finally, CIGSS solar cells with the three-step reaction were fabricated and devices with efficiency = 14.2% and V_OC = 599 mV were obtained.