Resistive switching metal-insulator-metal structures were fabricated from epitaxial Fe-doped SrTiO3 thin films to study the distribution of oxygen vacancies in a switched memristor cell using a micro-focused x-ray beam. In addition to the main filament, we found that the concentration of oxygen vacancies increases homogeneously over the whole electrode area during the electroforming procedure. The x-ray absorption near-edge structure (XANES) observed at the location of the filament exhibits distinct differences to the surrounding area, which are interpreted with full-multiple-scattering XANES calculations to derive from oxygen vacancy clustering in the first coordination shell around Fe.
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