The nucleation of the one dimensional periodic surface corrugations that form during epitaxy along the [-110] direction on the In0.48Ga0.52P lattice matched to (001) GaAs is investigated using x-ray diffuse scattering in the grazing incidence geometry. Comparing samples with differing In0.48Ga0.52P thickness shows that the corrugations are not detectable for a 10-nm film, but develop gradually for thicker films. Very pronounced corrugations are well developed for 200-nm thick films and are associated with a lateral strain field and enhanced In composition. The data support a lateral compositional modulation as the cause of the corrugations.

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