A detailed study of GaN-based planar asymmetric nanodiodes, promising devices for the fabrication of room temperature THz Gunn oscillators, is reported. By using Monte Carlo simulations, an analysis of the static I-V curves and the time-domain evolution of the current obtained when varying some simulation parameters in the diodes has been made. Oscillation frequencies of hundreds of GHz are predicted by the simulations in diodes with micrometric channel lengths. Following simulation guidelines, a first batch of diodes was fabricated. It was found that surface charge depletion effects are stronger than expected and inhibit the onset of the oscillations. Indeed, a simple standard constant surface charge model is not able to reproduce experimental measurements and a self-consistent model must be included in the simulations. Using a self-consistent model, it was found that to achieve oscillations, wider channels and improved geometries are necessary.
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1 June 2012
Research Article|
June 04 2012
Searching for THz Gunn oscillations in GaN planar nanodiodes
A. Íñiguez-de-la-Torre;
A. Íñiguez-de-la-Torre
1Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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I. Íñiguez-de-la-Torre;
I. Íñiguez-de-la-Torre
1Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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J. Mateos;
J. Mateos
1Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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T. González;
T. González
1Departamento de Física Aplicada,
Universidad de Salamanca
, Plaza de la Merced s/n, 37008 Salamanca, Spain
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P. Sangaré;
P. Sangaré
2
Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)
, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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M. Faucher;
M. Faucher
2
Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)
, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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B. Grimbert;
B. Grimbert
2
Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)
, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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V. Brandli;
V. Brandli
2
Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)
, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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G. Ducournau;
G. Ducournau
2
Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)
, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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C. Gaquière
C. Gaquière
2
Institut d’Electronique de Microélectronique et de Nanotechnologie (IEMN)
, UMR CNRS 8520, Université de Lille 1, Avenue Poincaré BP60069, 59652 Villeneuve d’Ascq CEDEX, France
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J. Appl. Phys. 111, 113705 (2012)
Article history
Received:
November 04 2011
Accepted:
May 03 2012
Citation
A. Íñiguez-de-la-Torre, I. Íñiguez-de-la-Torre, J. Mateos, T. González, P. Sangaré, M. Faucher, B. Grimbert, V. Brandli, G. Ducournau, C. Gaquière; Searching for THz Gunn oscillations in GaN planar nanodiodes. J. Appl. Phys. 1 June 2012; 111 (11): 113705. https://doi.org/10.1063/1.4724350
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