We present a detailed experimental study of the photoluminescence decay of direct Γ-Γ and indirect L-Γ transitions in compressively strained Ge/Si0.15Ge0.85 type I multiple quantum wells. The lifetime of the fundamental L-Γ indirect-gap related transition is in the 6 to 13 ns range at the lattice temperature of 14 K. These values are just one order of magnitude higher than those typical of type-I direct gap III-V quantum wells and are significantly shorter than those characteristic of type-II indirect gap SiGe/Si quantum wells. The measured decay times show a clear dependence on the quantum well width and lattice temperature. The decay of the Γ-Γ direct-gap related transition is dominated by the ultrafast electron scattering from Γ-type to L-type states of the conduction band.
REFERENCES
1.
Landolt-Börnstein: Numerical Data and Functional Relationships in Science and Technology—New Series
, edited by O.
Madelung
(Springer Verlag
, Berlin
, 1982
), Vol. III/17a
.2.
M.
Bonfanti
, E.
Grilli
, M.
Guzzi
, M.
Virgilio
, G.
Grosso
, D.
Chrastina
, G.
Isella
, H.
von Känel
, and A.
Neels
, Phys. Rev. B
78
, 041407
(R
) (2008
).3.
M.
Virgilio
and G.
Grosso
, J. Phys.: Condens. Matter
18
, 1021
(2006
).4.
M.
Bonfanti
, E.
Grilli
, M.
Guzzi
, D.
Chrastina
, G.
Isella
, H.
von Känel
, and H.
Sigg
, Physica E
41
, 972
(2009
).5.
Y. H.
Kuo
, Y. K.
Lee
, Y.
Ge
, S.
Ren
, J. E.
Roth
, T. I.
Kamins
, D. A. B.
Miller
, and J. S.
Harris
, Nature
437
, 1334
(2005
).6.
P.
Chaisakul
, D.
Marris-Morini
, G.
Isella
, D.
Chrastina
, X.
Le Roux
, E.
Gatti
, S.
Edmond
, J.
Osmond
, E.
Cassan
, and L.
Vivien
, Opt. Lett.
35
, 2913
(2010
).7.
C.
Lange
, N. S.
Köster
, S.
Chatterjee
, H.
Sigg
, D.
Chrastina
, G.
Isella
, H.
von Känel
, M.
Schäfer
, M.
Kira
, and S. W.
Koch
, Phys. Rev. B
79
, 201306
(R
) (2009
).8.
E.
Gatti
, E.
Grilli
, M.
Guzzi
, D.
Chrastina
, G.
Isella
, and H.
von Känel
, Appl. Phys. Lett.
98
, 031106
(2011
).9.
J.
Liu
, X.
Sun
, L. C.
Kimerling
, and J.
Michel
, Opt. Lett.
34
, 1738
(2009
).10.
G.
Isella
, D.
Chrastina
, B.
Rössner
, T.
Hackbarth
, H. J.
Herzog
, U.
König
, and H.
von Känel
, Solid-State Electron.
48
, 1317
(2004
).11.
V.
Härle
, H.
Belay
, E.
Lux
, P.
Michler
, A.
Moritt
, T.
Forner
, A.
Hangleiter
, and F.
Scholz
, J. Appl. Phys.
75
, 5067
(1994
).12.
S.
Fukatsu
, H.
Akiyama
, Y.
Shiraki
, and H.
Sakaki
, J. Cryst. Growth
157
, 1
(1995
).13.
J.
Christen
, D.
Bimberg
, A.
Steckenborn
, and G.
Weimann
, Appl. Phys. Lett.
44
, 84
(1984
).14.
J.
Feldmann
, G.
Peter
, E. O.
Göbel
, P.
Dawson
, K.
Moore
, C.
Foxon
, and R. J.
Elliott
, Phys. Rev. Lett.
59
, 2337
(1987
).15.
M.
Engel
, R. K.
Bauer
, D.
Bimberg
, D.
Grützmacher
, and H.
Jürgensen
, J. Cryst. Growth
93
, 359
(1988
).16.
T.
Amand
, X.
Marie
, B.
Dareys
, J.
Barrau
, M.
Brousseau
, D. J.
Dunstan
, J. Y.
Emery
, and L.
Goldstein
, J. Appl. Phys.
72
, 2077
(1992
).17.
J.
Tignon
, O.
Heller
, Ph.
Roussignol
, G.
Bastard
, C.
Piermarrochi
, R.
Planel
, and V.
Thierry-Mieg
, Physica E
2
, 126
(1998
).18.
W.
Hoyer
, C.
Ell
, M.
Kira
, S. W.
Koch
, S.
Chatterjee
, S.
Mosor
, G.
Khitrova
, H. M.
Gibbs
, and H.
Stolz
, Phys. Rev. B
72
, 075324
(2005
).19.
N. L.
Rowell
, J.-P.
Noël
, D. C.
Houghton
, A.
Wang
, L. C.
Lenchyshyn
, M. L. W.
Thewalt
, and D. D.
Perovic
, J. Appl. Phys.
74
, 2970
(1993
).20.
M.
Grundmann
and D.
Bimberg
, Phys. Rev. B
38
, 13486
(1988
).21.
C.
Weisbuch
and B.
Vinter
, Quantum Semiconductor Structures: Fundamentals and Applications
(Academic
, New York
, 1991
).22.
V.
Srinivas
, J.
Hryniewicz
, Y. J.
Chen
, and C. E. C.
Wood
, Phys. Rev. B
46
, 10193
(1992
).23.
K.
Tanaka
, M.
Suezawa
, and I.
Yonenaga
, J. Appl. Phys.
80
, 6991
(1996
).24.
M.
Grundmann
, D.
Bimberg
, A.
Fischer-Colbrie
, and J. N.
Miller
, Phys. Rev. B
41
, 10120
(1990
).25.
F.
Yang
, M.
Wilkinson
, E. J.
Austin
, andK. P.
O’Donnell
, Phys. Rev. Lett.
70
, 323
(1993
).26.
Y. P.
Varshni
, Physica (Amsterdam)
34
, 149
(1967
).27.
S. A.
Claussen
, E.
Tasyurek
, J. E.
Roth
, and D. A. B.
Miller
, Opt. Express
18
, 25596
(2010
).© 2012 American Institute of Physics.
2012
American Institute of Physics
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