Some point defects (i.e., oxygen vacancies) create deep trapping levels in the bandgap of the paraelectric phase ferroelectric crystals. Under applied DC field the traps release electrons via the Poole-Frenkel mechanism and become charged. The electric field of a point charge polarizes the crystal locally reducing its permittivity. In this paper a simple theory is proposed for calculating the DC field dependent apparent (measureable) permittivity of a paraelectric crystal with point charge defects. It is shown that the apparent permittivity of a paraelectric crystal may be sufficiently lower as compared with the defectless crystal. This reduction is in addition to the possible reduction of the apparent permittivity associated with the interfacial “dead” layers and strain.

1.
W. A.
Feil
and
B. W.
Wessels
,
J. Appl. Phys.
74
,
3927
(
1993
).
2.
M.
Dawber
,
J. F.
Rabe
, and
J. F.
Scott
,
Rev. Mod. Phys.
77
,
1083
(
2005
).
3.
O. G.
Vendik
,
S. P.
Zubko
, and
M. A.
Nikol’ski
,
J. Appl. Phys.
92
,
7448
(
2002
).
4.
S.
Gevorgian
,
A.
Vorobiev
, and
A.
Deleniv
,
Ferroelectrics in Microwave Devices Circuits and Systems
(
Springer
,
London
,
2009
).
5.
A. I.
Dedyk
,
S. F.
Karmanenko
,
M. N.
Malyshev
, and
L. T.
Ter-Martirosyan
,
Phys. Solid State
37
,
1906
(
1995
).
6.
A.
Vorobiev
,
P.
Rundqvist
,
K.
Khamchane
, and
S.
Gevorgian
,
J. Appl. Phys.
96
,
4642
(
2004
).
7.
J. D.
Baniecki
,
T.
Shioga
,
K.
Kurihara
, and
N.
Kamehara
,
J Appl. Phys.
97
,
114101
(
2005
).
8.
A. K.
Tagantsev
,
I.
Stolichnov
,
E. L.
Colla
, and
N.
Setter
,
J. Appl. Phys.
90
,
1387
(
2001
).
9.
A. B.
Kozyrev
,
V. N.
Osadchy
,
D. M.
Kosmin
, and
A. V.
Tumarkin
,
Appl. Phys. Lett.
91
,
022905
(
2007
).
10.
N. McN.
Alford
,
P. Kr.
Petrov
,
A. G.
Gagarin
,
A. B.
Kozyrev
,
A. I.
Sokolov
,
O. I.
Soldatenkov
, and
V. A.
Volpyas
,
Appl. Phys. Lett.
87
,
222904
(
2005
).
11.
T.
Bieger
, and
J.
Maler
,
Solid State Ionics
53–56
,
578
(
1992
).
12.
R. I.
Eglitis
,
E. A.
Kotomin
, and
G.
Borstel
,
Phys. Status Solidi C
2
,
113
(
2005
).
13.
J.
Gerblinger
and
H.
Meixner
,
J. Appl. Phys.
67
,
7453
(
1990
).
14.
D. C.
Lupascu
,
Solid State Ionics
177
,
3161
(
2006
).
15.
A. G.
Milnes
,
Deep Impurities in Semiconductors
(
John Wiley & Sons
,
New York
,
1973
), p.
558
.
16.
A. K.
Tagantsev
and
G.
Gerra
,
J. Appl. Phys.
100
,
051607
(
2006
).
17.
M.
Stengel
and
N. A.
Spaldin
,
Nature
443
,
679
(
2006
).
18.
A.
Antons
,
J. B.
Neaton
,
K. M.
Rabe
, and
D.
Vanderbilt
,
Phys. Rev. B
71
,
024102
(
2005
).
19.
S.
Gevorgian
,
P. K.
Petrov
,
S.
Abadei
, and
Z.
Ivanov
,
Integr. Ferroelectr.
33
,
311
(
2001
).
20.
Y. -P.
Wang
and
T. -Y.
Tseng
,
J. Appl. Phys.
81
,
6762
(
1977
).
21.
T.
Tanaka
,
K.
Matsunaga
,
Y.
Ikuhara
, and
T.
Yamamoto
,
Phys. Rev. B
68
,
205213
(
2003
).
22.
J.
Robertson
,
J. Appl. Phys.
93
,
1054
(
2003
).
23.
M. O.
Selme
and
P.
Pecheur
,
J. Phys. C
21
,
1779
(
1988
).
24.
C. Y.
Chang
,
W. C.
Hsu
,
S. J.
Wang
, and
S. S.
Hau
,
J. Appl. Phys.
60
,
1042
(
1986
).
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