To accurately evaluate the Ge metal-insulator-semiconductor (MIS) interface trap density (Dit) by employing the conventional method for Si MIS capacitors on Ge MIS capacitors, we have investigated the impact of majority and minority carrier responses on C-V curves and/or the energy distributions of Dit. It is found that the high-frequency C-V curve, which does not include the majority carrier response with interface traps, cannot be obtained near room temperature (RT) even at 1 MHz. Therefore, to accurately evaluate the Dit values using the Terman method, the C-V curve has to be measured at an appropriate temperature. Furthermore, in the conductance method, evaluations by the model including the narrow bandgap effects are needed to obtain accurate Dit of the Ge MIS interface near RT. Through such accurate evaluation, the interface properties with different kinds of interfacial layers have been investigated. Although the GeO2/Ge interface has a low Dit and a fixed oxide charge density, the total charged center density contributing to surface potential fluctuation is larger than those for the GeOx/Ge and GeOxNy/Ge interfaces. These results suggest that the evaluation methods of the Ge MIS interface taking into account the appropriate carrier responses is quite important to obtain accurate Ge MIS interface properties.
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15 September 2011
Research Article|
September 19 2011
Accurate evaluation of Ge metal—insulator—semiconductor interface properties
Noriyuki Taoka;
Noriyuki Taoka
a)
1
MIRAI-NIRC
, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba 305-8569, Japan
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Keiji Ikeda;
Keiji Ikeda
2
MIRAI-Toshiba
, 1 Komukai Toshiba-Cho, Saiwai-ku, Kawasaki 212-8582, Japan
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Wataru Mizubayashi;
Wataru Mizubayashi
1
MIRAI-NIRC
, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba 305-8569, Japan
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Yukinori Morita;
Yukinori Morita
1
MIRAI-NIRC
, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba 305-8569, Japan
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Shinji Migita;
Shinji Migita
1
MIRAI-NIRC
, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba 305-8569, Japan
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Hiroyuki Ota;
Hiroyuki Ota
1
MIRAI-NIRC
, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba 305-8569, Japan
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Shinichi Takagi
Shinichi Takagi
1
MIRAI-NIRC
, AIST Tsukuba West 7, 16-1 Onogawa, Tsukuba 305-8569, Japan
3
The University of Tokyo
, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected]. Present address: The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan.
J. Appl. Phys. 110, 064506 (2011)
Article history
Received:
June 28 2011
Accepted:
August 04 2011
Citation
Noriyuki Taoka, Keiji Ikeda, Wataru Mizubayashi, Yukinori Morita, Shinji Migita, Hiroyuki Ota, Shinichi Takagi; Accurate evaluation of Ge metal—insulator—semiconductor interface properties. J. Appl. Phys. 15 September 2011; 110 (6): 064506. https://doi.org/10.1063/1.3633517
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