By combining electrical, physical, and transport/atomistic modeling results, this study identifies critical conductive filament (CF) features controlling TiN/HfO2/TiN resistive memory (RRAM) operations. The leakage current through the dielectric is found to be supported by the oxygen vacancies, which tend to segregate at hafnia grain boundaries. We simulate the evolution of a current path during the forming operation employing the multiphonon trap-assisted tunneling (TAT) electron transport model. The forming process is analyzed within the concept of dielectric breakdown, which exhibits much shorter characteristic times than the electroforming process conventionally employed to describe the formation of the conductive filament. The resulting conductive filament is calculated to produce a non-uniform temperature profile along its length during the reset operation, promoting preferential oxidation of the filament tip. A thin dielectric barrier resulting from the CF tip oxidation is found to control filament resistance in the high resistive state. Field-driven dielectric breakdown of this barrier during the set operation restores the filament to its initial low resistive state. These findings point to the critical importance of controlling the filament cross section during forming to achieve low power RRAM cell switching.

1.
R.
Waser
,
R.
Dittmann
,
G.
Staikov
, and
K.
Szot
,
Adv. Mater.
21
,
2632
(
2009
).
2.
A.
Beck
,
J. G.
Bednorz
, C
h.
Gerber
,
C.
Russel
, and
D.
Widmer
,
Appl. Phys. Lett.
77
,
139
(
2000
).
3.
A.
Sawa
,
Mater. Today
11
,
28
(
2008
).
4.
I. G.
Baek
,
M. S.
Lee
,
S.
Seo
,
M. J.
Lee
,
D. H.
Seo
,
D.-S.
Suh
,
J. C.
Park
,
S. O.
Park
,
H. S.
Kim
,
I. K.
Yoo
,
U.-In.
Chung
, and
J. T.
Moon
,
IEEE IEDM 2004 Technical Digest
,
587
(
IEEE
,
Piscataway, NJ
,
2004
).
5.
Yong-Mu
Kim
and
Jang-Sik
Lee
,
J. Appl. Phys.
104
,
114115
(
2008
).
6.
P.-S.
Chen
,
H.-Y.
Lee
,
Y.-S.
Chen
,
F.
Chen
, and
M.-J.
Tsai
,
Jpn. J. Appl. Phys.
49
,
04DD18
(
2010
).
7.
P.
Gonon
,
M.
Mougenot
,
C.
Vallée
,
C.
Jorel
,
V.
Jousseaume
,
H.
Grampeix
, and
F.
El Kamel
,
J. Appl. Phys.
107
,
074507
(
2010
).
8.
L.
Goux
,
P.
Czarnecki
,
Y. Y.
Chen
,
L.
Pantisano
,
X. P.
Wang
,
R.
Degraeve
,
B.
Govoreanu
,
M.
Jurczak
,
D. J.
Wouters
, and
L.
Altimime
,
Appl. Phys. Lett.
97
,
243509
(
2010
).
9.
B. J.
Choi
,
D. S.
Jeong
,
S. K.
Kim
,
C.
Rohde
,
S.
Choi
,
J. H.
Oh
,
H. J.
Kim
,
C. S.
Hwang
,
K.
Szot
,
R.
Waser
,
B.
Reichenberg
, and
S.
Tiedke
,
J. Appl. Phys.
98
,
033715
(
2005
).
10.
U.
Russo
,
D.
Ielmini
,
C.
Cagli
, and
A. L.
Lacaita
,
IEEE Trans. Electron Devices
56
,
186
(
2009
).
11.
B.
Gao
,
B.
Sun
,
H.
Zhang
,
L. L.
Xiaoyan
,
L. R.
Han
,
J.
Kang
, and
B.
Yu
,
IEEE Electron Device Lett.
30
,
1326
(
2009
).
12.
G.
Bersuker
,
D. C.
Gilmer
,
D.
Veksler
,
J.
Yum
,
H.
Park
,
S.
Lian
,
L.
Vandelli
,
A.
Padovani
,
L.
Larcher
,
K.
McKenna
,
A.
Shluger
,
V.
Iglesias
,
M.
Porti
,
M.
Nafrìa
,
W.
Taylor
,
P. D.
Kirsch
, and
R.
Jammy
,
IEEE IEDM
2010
,
19
6
(IEEE, Piscataway, NJ,
2010
).
13.
S.
Lombardo
,
J. H.
Stathis
,
B. P.
Linder
,
K. L.
Pey
,
F.
Palumbo
, and
C. H.
Tung
,
J. Appl. Phys.
98
,
121301
(
2005
).
14.
Y. C.
Ong
,
D. S.
Ang
,
K. L.
Pey
,
Z. R.
Wang
,
S. J.
O’Shea
,
C. H.
Tung
,
T.
Kawanago
,
K.
Kakushima
, and
H.
Iwai
,
Appl. Phys. Lett.
92
,
022904
(
2008
).
15.
S.
Foster
,
A.
Shluger
, and
R. M.
Nieminen
,
Phys. Rev. Lett.
89
,
225901
(
2002
).
16.
L.
Larcher
,
Trans. Electron Devices
50
,
1246
(
2003
).
17.
M. R.
Herrmann
and
A.
Schenk
,
J. Appl. Phys.
77
,
4522
(
1995
).
18.
F.
Jiménez-Molinos
,
A.
Palma
,
F.
Gámiz
,
J.
Banqueri
,
J. A.
López-Villanueva
,
J. Appl. Phys.
90
,
3396
(
2001
).
19.
L.
Goux
,
Y.-Y
Chen
,
L.
Pantisano
,
X.-P.
Wang
,
G.
Groeseneken
,
M.
Jurczak
, and
D. J.
Wouters
,
Electrochem. Solid-State Lett.
13
, G
54
(
2010
).
20.
Yu-Sheng
Chen
,
Heng-Yuan
Lee
,
Pang-Shiu
Chen
,
Pei-Yi
Gu
,
Wen-Hsing
Liu
,
Wei-Su
Chen
,
Yen-Ya
Hsu
,
Chen-Han
Tsai Chen
,
F.
Ming-Jinn Tsai
, and
Chenhsin
Lien
,
IEEE Electron Device Lett.
32
,
390
(
2011
).
21.
Kuan-Liang
Lin
,
Tuo-Hung
Hou
,
Jiann
Shieh
,
Jun-Hung
Lin
,
Cheng-Tung
Chou
, and
Yao-Jen
Lee
,
J. Appl. Phys.
109
,
084104
(
2011
).
22.
S.
Yu
and
H.-S. P.
Wong
,
IEEE Electron Device Lett.
31
,
1455
(
2010
).
23.
J.
J. Yang
,
M.-X.
Zhang
,
J. P.
Strachan
,
F.
Miao
,
M. D.
Pickett
,
R. D.
Kelley
,
G.
Medeiros-Ribeiro
, and
R. S.
Williams
,
Appl. Phys. Lett.
97
,
232102
(
2010
).
24.
N.
Raghavan
,
K. L.
Pey
,
W.
Liu
,
X.
Wu
,
X.
Li
, and
M.
Bosman
,
Microelectronic Engineering
88
,
1124
(
2011
).
25.
P.
Fiorenza
,
P. W.
Polspoel
, and
W. W.
Vandervorst
,
Appl. Phys. Lett.
88
,
222104
(
2006
).
26.
M.
Porti
,
M.
Nafría
, and
X.
Aymerich
,
IEEE Trans. Nanotechnol.
3
,
55
(
2004
).
27.
L.
Zhang
and
Y.
Mitani
,
Appl. Phys. Lett.
88
,
032906
(
2006
).
28.
V.
Yanev
,
M.
Rommel
,
M.
Lemberger
,
S.
Petersen
,
B.
Amon
,
T.
Erlbacher
,
A. J.
Bauer
,
H.
Ryssel
,
A.
Paskaleva
,
W.
Weinreich
,
C.
Fachmann
,
J.
Heitmann
, and
U.
Schroeder
,
Appl. Phys. Lett.
92
,
252910
(
2008
).
29.
Y. L.
Wu
,
S. T.
Lin
, and
C. P.
Lee
,
IEEE Trans. Device Mater. Reliab.
8
,
352
(
2008
).
30.
M.
Porti
,
M.
Nafría
,
X.
Aymerich
,
A.
Olbrich
, and
B.
Ebersberger
,
J. Appl. Phys.
9
,
2071
(
2002
).
31.
K. S.
Yew
,
Y. C.
Ong
,
D. S.
Ang
,
K. L.
Pey
,
G.
Bersuker
,
P. S.
Lysaght
, and
D.
Heh
, in
Proceedings of the Solid-State Device Research Conference
,
Tokyo
,
2009
.
32.
V.
Iglesias
,
M.
Porti
,
M.
Nafría
,
X.
Aymerich
,
P.
Dudek
,
T.
Schroeder
, and
G.
Bersuker
,
Appl. Phys. Lett.
97
,
262906
(
2010
).
33.
G.
Bersuker
,
J.
Yum
,
V.
Iglesias
,
M.
Porti
,
M.
Nafría
,
K.
McKenna
,
A.
Shluger
,
P.
Kirsch
, and
R.
Jammy
, in
Proceedings of the European Solid-State Device Research Conference (ESSDERC)
,
2010
, pp.
333
336
, 14–16 September 2010.
34.
K.
McKenna
and
A.
Shluger
,
Appl. Phys. Lett.
95
,
222111
(
2009
).
35.
V.
Iglesias
,
M.
Lanza
,
K.
Zhang
,
A.
Bayerl
,
M.
Porti
,
M.
Nafría
,
X.
Aymerich
,
Z. Y.
Shen
, and
G.
Bersuker
, “Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress,” Appl. Phys. Lett. (unpublished).
36.
V.
Iglesias
,
M.
Porti
,
M.
Nafría
,
X.
Aymerich
,
P.
Dudek
, and
G.
Bersuker
J. Vac. Sci. Technol. B
29
,
01AB02
(
2011
).
37.
G. W.
Watson
,
E. T.
Kelsey
,
N. H.
de Leeuw
,
D. J.
Harris
, and
S. C.
Parker
,
J. Chem. Soc. Faraday Trans.
92
,
433
(
1996
).
38.
G.
Kresse
and
J.
Furthmüller
,
Phys. Rev. B
54
,
11169
(
1996
).
39.
G.
Kresse
and
J.
Furthmüller
,
Comput. Mater. Sci.
6
,
15
(
1996
).
40.
N.
Capron
,
P.
Broqvist
, and
A.
Pasquarello
,
Appl. Phys. Lett.
91
,
192905
(
2007
).
41.
C. B.
Duke
,
Tunneling in Solids
(
Academic Press
,
New York
,
1969
).
42.
M. V.
Fischetti
,
D. A.
Neumayer
, and
E. A.
Cartier
,
J. Appl. Phys.
90
,
4587
(
2001
).
43.
L.
Vandelli
,
A.
Padovani
,
L.
Larcher
,
R. G.
Southwick
,
W. B.
Knowlton
, and
G.
Bersuker
,
Proceedings of the European Solid-State Device Research Conference (ESSDERC) (Sevilla Microelectronics Inst.
, Sevilla,
Spain
,
2010
), 14–16, pp.
388
391
.
44.
K.
Huang
and
A.
Rhys
,
Proc. R. Soc. London
204A
,
406
(
1950
).
45.
W. B.
Fowler
,
J. K.
Rudra
,
M. E.
Zvant
, and
F. J.
Feigl
,
Phys. Rev. B
41
,
8313
(
1990
).
46.
C. H.
Henry
and
D. V.
Lang
,
Phys. Rev. B
15
,
989
(
1977
).
47.
J.
McPherson
,
J. Y.
Kim
,
A.
Shanware
, and
H.
Mogul
,
Appl. Phys. Lett.
82
,
2121
(
2003
).
48.
G.
Bersuker
,
Y.
Jeon
, and
H. R.
Huff
,
Microelectronics Reliability
41
,
1923
(
2001
) .
49.
S.
Lee
,
S.
Song
, and
K.
Moran
,
SME/JSME Therm. Eng. Conference
4
,
199
(
1995
).
50.
D. T.
Gillespie
,
J. Comput. Phys.
22
,
403
(
1976
).
51.
P. S.
Lysaght
,
J. C.
Woicik
,
M.
Alper Sahiner
,
B.-H.
Lee
, and
R.
Jammy
,
Appl. Phys. Lett.
91
,
122910
(
2007
).
52.
D. C.
Gilmer
,
G.
Bersuker
,
H.-Y.
Park
 et al, 3rd IEEE International Memory Workshop (IMW), 22–25 May 2011, pp.
1
4
.
53.
J. J.
Yang
,
F.
Miao
,
M. D.
Pickett
,
D. A. A.
Ohlberg
,
D. R.
Stewart
,
C. N.
Lau
, and
R. S.
Williams
,
Nanotechnology
20
,
215201
(
2009
).
54.
A.
Kalantarian
,
G.
Bersuker
,
D. C.
Gilmer
,
M.
Jo
,
B.
Butcher
,
C.
Park
,
S.
Koveshnikov
,
Y.
Nishi
, and
P. D.
Kirsch
,
Stanford Nonvolatile Memory Technology Research Initiative (NMTRI)
, May 2011.
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