Manipulating the electrical properties of carbon nanotubes through semi-metal or semiconductor filling is of paramount importance in the realization of nano-electronic devices based on one dimensional composite materials. From low temperature electrical conductivity measurements of a network, of empty and filled double-walled carbon nanotubes (DWNT’s), we report a transition in electrical transport features from hopping to weakly activated conduction by HgTe filling and also semi-metallic conduction in selenium (Se) filled DWNT’s. Magneto-resistance (MR) studies of the filled DWNT’s show suppression of the hopping conduction and a signature of 3D weak localization for Se@DWNT’s at low temperatures and high magnetic fields. These results are discussed on the basis of strength of interaction between the filler material and the inner-walls of the host DWNT’s, which enhances the electronic density of states (DOS) in the material as well as the change in the property of the filler material due to constrained encapsulation.
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15 December 2011
Research Article|
December 21 2011
Tuning the electrical transport properties of double-walled carbon nanotubes by semiconductor and semi-metal filling Available to Purchase
George Chimowa;
George Chimowa
1
Nano-Scale Transport Physics Laboratory, School of Physics, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
2
DST/NRF Centre of Excellence in Strong Materials, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
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Mariana Sendova;
Mariana Sendova
3
Optical Spectroscopy and Nano-Materials Lab, Division of Natural Sciences
, New College of Florida, Sarasota, Florida 34243, USA
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Emmanuel Flahaut;
Emmanuel Flahaut
4
Universite Paul Sabatier, CNRS, Institut Carnot Cirimat
, 118, route de Narbonne, F-31062 Toulouse 11 Cedex 9, France
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Dmitry Churochkin;
Dmitry Churochkin
1
Nano-Scale Transport Physics Laboratory, School of Physics, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
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Somnath Bhattacharyya
Somnath Bhattacharyya
a)
1
Nano-Scale Transport Physics Laboratory, School of Physics, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
2
DST/NRF Centre of Excellence in Strong Materials, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
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George Chimowa
1,2
Mariana Sendova
3
Emmanuel Flahaut
4
Dmitry Churochkin
1
Somnath Bhattacharyya
1,2,a)
1
Nano-Scale Transport Physics Laboratory, School of Physics, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
2
DST/NRF Centre of Excellence in Strong Materials, University of Witwatersrand
, Private Bag 3, WITS 2050, Johannesburg, South Africa
3
Optical Spectroscopy and Nano-Materials Lab, Division of Natural Sciences
, New College of Florida, Sarasota, Florida 34243, USA
4
Universite Paul Sabatier, CNRS, Institut Carnot Cirimat
, 118, route de Narbonne, F-31062 Toulouse 11 Cedex 9, France
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 110, 123708 (2011)
Article history
Received:
September 15 2011
Accepted:
November 15 2011
Citation
George Chimowa, Mariana Sendova, Emmanuel Flahaut, Dmitry Churochkin, Somnath Bhattacharyya; Tuning the electrical transport properties of double-walled carbon nanotubes by semiconductor and semi-metal filling. J. Appl. Phys. 15 December 2011; 110 (12): 123708. https://doi.org/10.1063/1.3670879
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