The family of soluble fullerene derivatives comprises a widely studied group of electron transporting molecules for use in organic electronic and optoelectronic devices. For electronic applications, electron transporting (n-channel) materials are required for implementation into organic complementary logic circuit architectures. To date, few soluble candidate materials have been studied that fulfill the stringent requirements of high carrier mobility and air stability. Here we present a study of three soluble fullerenes with varying electron affinity to assess the impact of electronic structure on device performance and air stability. Through theoretical and experimental analysis of the electronic structure, characterization of thin-film structure, and characterization of transistor device properties we find that the air stability of the present series of fullerenes not only depends on the absolute electron affinity of the semiconductor but also on the disorder within the thin-film.
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1 July 2011
Research Article|
July 08 2011
Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability
James M. Ball;
James M. Ball
1Department of Physics,
The Blackett Laboratory
, Imperial College London, London, SW7 2AZ, United Kingdom
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Ricardo K. M. Bouwer;
Ricardo K. M. Bouwer
2Stratingh Institute for Molecular Chemistry,
University of Groningen
, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
3
Dutch Polymer Institute
, PO Box 902, 56000 AX Eindhoven, The Netherlands
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Floris B. Kooistra;
Floris B. Kooistra
2Stratingh Institute for Molecular Chemistry,
University of Groningen
, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
4Zernike Institute for Advanced Materials,
University of Groningen
, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
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Jarvist M. Frost;
Jarvist M. Frost
1Department of Physics,
The Blackett Laboratory
, Imperial College London, London, SW7 2AZ, United Kingdom
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Yabing Qi;
Yabing Qi
5Department of Electrical Engineering,
Princeton University
, Princeton, New Jersey 08544, USA
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Ester Buchaca Domingo;
Ester Buchaca Domingo
6
Department of Materials, Imperial College London
, London, SW7 2AZ, United Kingdom
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Jeremy Smith;
Jeremy Smith
1Department of Physics,
The Blackett Laboratory
, Imperial College London, London, SW7 2AZ, United Kingdom
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Dago M. de Leeuw;
Dago M. de Leeuw
7
Phillips Research Laboratories
, High Tech Campus 4, Eindhoven, Newfoundland and Labrador-5656AE, The Netherlands
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Jan C. Hummelen;
Jan C. Hummelen
2Stratingh Institute for Molecular Chemistry,
University of Groningen
, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
4Zernike Institute for Advanced Materials,
University of Groningen
, Nijenborgh 4, 9747 AG, Groningen, The Netherlands
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Jenny Nelson;
Jenny Nelson
1Department of Physics,
The Blackett Laboratory
, Imperial College London, London, SW7 2AZ, United Kingdom
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Antoine Kahn;
Antoine Kahn
5Department of Electrical Engineering,
Princeton University
, Princeton, New Jersey 08544, USA
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Natalie Stingelin;
Natalie Stingelin
6
Department of Materials, Imperial College London
, London, SW7 2AZ, United Kingdom
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Donal D. C. Bradley;
Donal D. C. Bradley
1Department of Physics,
The Blackett Laboratory
, Imperial College London, London, SW7 2AZ, United Kingdom
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Thomas D. Anthopoulos
Thomas D. Anthopoulos
a)
1Department of Physics,
The Blackett Laboratory
, Imperial College London, London, SW7 2AZ, United Kingdom
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 110, 014506 (2011)
Article history
Received:
March 15 2011
Accepted:
May 18 2011
Citation
James M. Ball, Ricardo K. M. Bouwer, Floris B. Kooistra, Jarvist M. Frost, Yabing Qi, Ester Buchaca Domingo, Jeremy Smith, Dago M. de Leeuw, Jan C. Hummelen, Jenny Nelson, Antoine Kahn, Natalie Stingelin, Donal D. C. Bradley, Thomas D. Anthopoulos; Soluble fullerene derivatives: The effect of electronic structure on transistor performance and air stability. J. Appl. Phys. 1 July 2011; 110 (1): 014506. https://doi.org/10.1063/1.3605531
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