Carbon diffusion in alumina from carbon and Ti₂AlC thin films Available to Purchase

Carbon diffusion is observed in single crystal $α$-$Al2$$O3$ substrates from carbon and $Ti2AlC$ thin films synthesized via pulsed cathodic arc deposition. Diffusion was found to occur at substrate temperatures of 570 °C and above. The diffusion coefficient of carbon in $α$-$Al2$$O3$ is estimated to be of the order $3×10-13$ $cm2$/s for deposition temperatures in the 570–$770∘C$ range by examining elastic recoil detection analysis (ERDA) elemental depth profiles. It is suggested that an appropriate diffusion barrier may be useful when depositing carbon containing thin films on $α$-$Al2$$O3$ substrates at high temperatures.