First-principles density functional calculations were performed for magnetic properties of wurtzite (X = S, Se, and Te) alloys in the presence of Zn cation vacancies and a low concentration of group-VI dopants in the framework of the local spin density approximation (LSDA) and the LSDA+U method. The positions of the Zn- states are misplaced in the LSDA approach and these positions are approximately corrected in the LSDA+U method. We demonstrate that the magnetic state of with a native point defect is mainly localized at the Zn cation vacancy. The substitution of oxygen atoms around the vacancy by chalcogens X does not destroy the local spin triplet state () at the zinc vacancy but diminishes its stability. The X impurities prefer to be close to the Zn vacancy in the apex position and the destabilization of the magnetic state increases in the series from X = S to X = Te. In order to explain the calculated magnetic properties a group theory analysis has been exploited.
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1 April 2011
Research Article|
April 01 2011
First principles study on magnetic properties of Zn vacancies in ZnO doped with single chalcogen X (X = S, Se, and Te)
Mahdi Sargolzaei;
Mahdi Sargolzaei
a)
1Department of Physics,
Iran University of Science and Technology
, Narmak 16345, Tehran, Iran
2Computational Physical Science Laboratory, Department of Nano-Science,
Institute for Research in Fundamental Sciences (IPM)
, Tehran, Iran
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Neda Lotfizadeh;
Neda Lotfizadeh
1Department of Physics,
Iran University of Science and Technology
, Narmak 16345, Tehran, Iran
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Roland Hayn
Roland Hayn
3
Institut Matériaux Microélectronique Nanosciences de Provence, Faculté St. Jérôme
, Case 142, F-13397 Marseille Cedex 20, France
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a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 109, 073705 (2011)
Article history
Received:
November 09 2010
Accepted:
February 09 2011
Citation
Mahdi Sargolzaei, Neda Lotfizadeh, Roland Hayn; First principles study on magnetic properties of Zn vacancies in ZnO doped with single chalcogen X (X = S, Se, and Te). J. Appl. Phys. 1 April 2011; 109 (7): 073705. https://doi.org/10.1063/1.3562168
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