Resistive switching memory (RRAM) based on the redox-induced conductivity change in some metal oxides attracts considerable interest as a new technology for next-generation nonvolatile electronic storage. Although resistance-switching phenomena in several transition metal oxides have been known from decades, the details of the switching mechanisms and the nature of the different resistive states are still largely debated. For nonvolatile memory applications, the scaling potential of RRAMs is the most relevant issue, and understanding the scaling capability of RRAM devices requires a sound interpretation of resistance-switching operation and reliability aspects. This work addresses the scaling dependence of RRAM switching parameters. The dependence on the electrode area and on the size of the conductive filament (CF) responsible for low-resistance memory state is investigated. The RRAM conduction modes depending on CF size are discussed based on temperature dependent resistance analysis. Reset characteristics in different resistance states are explained by a Joule heating model for CF oxidation.
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1 February 2011
Research Article|
February 15 2011
Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices
D. Ielmini;
D. Ielmini
a)
1Dipartimento di Elettronica e Informazione and IU.NET,
Politecnico di Milano
, piazza L. da Vinci 32, 20133 Milano (MI), Italy
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S. Spiga;
S. Spiga
2Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza, Italy
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F. Nardi;
F. Nardi
1Dipartimento di Elettronica e Informazione and IU.NET,
Politecnico di Milano
, piazza L. da Vinci 32, 20133 Milano (MI), Italy
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C. Cagli;
C. Cagli
1Dipartimento di Elettronica e Informazione and IU.NET,
Politecnico di Milano
, piazza L. da Vinci 32, 20133 Milano (MI), Italy
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A. Lamperti;
A. Lamperti
2Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza, Italy
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E. Cianci;
E. Cianci
2Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza, Italy
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M. Fanciulli
M. Fanciulli
2Laboratorio MDM,
IMM-CNR
, via C. Olivetti 2, 20864 Agrate Brianza, Italy
3Dipartimento di Scienza dei Materiali,
Università degli Studi di Milano-Bicocca
, Piazza dell'Ateneo Nuovo, 1-20126, Milano, Italy
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a)
Electronic mail: ielmini@elet.polimi.it.
J. Appl. Phys. 109, 034506 (2011)
Article history
Received:
June 07 2010
Accepted:
December 13 2010
Citation
D. Ielmini, S. Spiga, F. Nardi, C. Cagli, A. Lamperti, E. Cianci, M. Fanciulli; Scaling analysis of submicrometer nickel-oxide-based resistive switching memory devices. J. Appl. Phys. 1 February 2011; 109 (3): 034506. https://doi.org/10.1063/1.3544499
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