This paper presents results of thin film contact resistance with dissimilar materials. The model assumes arbitrary resistivity ratios and aspect ratios between contact members, for both Cartesian and cylindrical geometries. It is found that the contact resistance is insensitive to the resistivity ratio for a/h < 1, but is rather sensitive to the resistivity ratio for a/h > 1 where a is the constriction size and h is film thickness. Various limiting cases are studied and validated with known results. Accurate analytical scaling laws are constructed for the contact resistance over a large range of aspect ratios and resistivity ratios. Typically the minimum contact resistance is realized with a/h ∼ 1, for both Cartesian and cylindrical cases. Electric field patterns are presented, showing the crowding of the field lines in the contact region.
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15 June 2011
Research Article|
June 28 2011
Thin film contact resistance with dissimilar materials
Peng Zhang;
Peng Zhang
Department of Nuclear Engineering and Radiological Sciences,
University of Michigan
, Ann Arbor, Michigan 48109-2104, USA
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Y. Y. Lau;
Y. Y. Lau
a)
Department of Nuclear Engineering and Radiological Sciences,
University of Michigan
, Ann Arbor, Michigan 48109-2104, USA
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R. M. Gilgenbach
R. M. Gilgenbach
Department of Nuclear Engineering and Radiological Sciences,
University of Michigan
, Ann Arbor, Michigan 48109-2104, USA
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a)
Electronic mail: [email protected].
J. Appl. Phys. 109, 124910 (2011)
Article history
Received:
February 03 2011
Accepted:
April 30 2011
Citation
Peng Zhang, Y. Y. Lau, R. M. Gilgenbach; Thin film contact resistance with dissimilar materials. J. Appl. Phys. 15 June 2011; 109 (12): 124910. https://doi.org/10.1063/1.3596759
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