Electronic and optical switching of solution-phase deposited SnSe₂ phase change memory material

We report the use of chalcogenidometallate clusters as a solution-processable precursor to SnSe₂ for phase change memory applications. This precursor is spin-coated onto substrates and then thermally decomposed into a crystalline SnSe₂ film. Laser testing of our SnSe₂ films indicate very fast recrystallization times of 20 ns. We also fabricate simple planar SnSe₂ electronic switching devices that demonstrate switching between ON and OFF resistance states with resistance ratios varying from 7−76. The simple cell design resulted in poor cycling endurance. To demonstrate the precursor’s applicability to advanced via-geometry memory devices, we use the precursor to create void-free SnSe₂ structures inside nanowells of ∼25 nm in diameter and ∼40 nm in depth.