The design of some optical devices, such as semiconductor optical amplifiers for telecommunication applications, requires polarization-insensitive optical emission at long wavelengths (1300–1550 nm). Self-assembled InAs/GaAs quantum dots (QDs) typically exhibit ground state optical emissions at wavelengths shorter than 1300 nm with highly polarization-sensitive characteristics, although this can be modified by the use of low growth rates, the incorporation of strain-reducing capping layers, or the growth of closely-stacked QD layers. Exploiting the strain interactions between closely stacked QD layers also affords greater freedom in the choice of growth conditions for the upper layers, so that both a significant extension in their emission wavelength and an improved polarization response can be achieved due to modification of the QD size, strain, and composition. In this paper, we investigate the polarization behavior of single and stacked QD layers using room temperature sub-lasing-threshold electroluminescence and photovoltage measurements, as well as atomistic modeling with the NEMO 3-D simulator. A reduction is observed in the ratio of the transverse electric (TE) to transverse magnetic (TM) optical mode response for a GaAs-capped QD stack as compared to a single QD layer, but when the second layer of the two-layer stack is InGaAs-capped, an increase in the TE/TM ratio is observed, in contrast to recent reports for single QD layers.
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15 May 2011
Research Article|
May 26 2011
Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm)
Muhammad Usman;
Muhammad Usman
1
Network for Computational Nanotechnology, Electrical and Computer Engineering Department, Purdue University
, West Lafayette, Indiana 47907, USA
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Susannah Heck;
Susannah Heck
2
Department of Physics, Imperial College London
, Blackett Laboratory, Prince Consort Road, London SW7 2AZ, United Kingdom
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Edmund Clarke;
Edmund Clarke
c)
2
Department of Physics, Imperial College London
, Blackett Laboratory, Prince Consort Road, London SW7 2AZ, United Kingdom
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Peter Spencer;
Peter Spencer
2
Department of Physics, Imperial College London
, Blackett Laboratory, Prince Consort Road, London SW7 2AZ, United Kingdom
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Hoon Ryu;
Hoon Ryu
1
Network for Computational Nanotechnology, Electrical and Computer Engineering Department, Purdue University
, West Lafayette, Indiana 47907, USA
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Ray Murray;
Ray Murray
2
Department of Physics, Imperial College London
, Blackett Laboratory, Prince Consort Road, London SW7 2AZ, United Kingdom
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Gerhard Klimeck
Gerhard Klimeck
1
Network for Computational Nanotechnology, Electrical and Computer Engineering Department, Purdue University
, West Lafayette, Indiana 47907, USA
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Muhammad Usman
1
Susannah Heck
2
Edmund Clarke
2,c)
Peter Spencer
2
Hoon Ryu
1
Ray Murray
2
Gerhard Klimeck
1
1
Network for Computational Nanotechnology, Electrical and Computer Engineering Department, Purdue University
, West Lafayette, Indiana 47907, USA
2
Department of Physics, Imperial College London
, Blackett Laboratory, Prince Consort Road, London SW7 2AZ, United Kingdom
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
b)
Now at Tyndall National Institute, Lee Maltings Dyke Parade, Cork, Ireland.
c)
Now at EPSRC National Centre for III-V Technologies, Centre for Nanoscience and Technology, University of Sheffield, North Campus, Broad Lane, Sheffield S3 7HQ, United Kingdom.
J. Appl. Phys. 109, 104510 (2011)
Article history
Received:
December 15 2010
Accepted:
April 05 2011
Citation
Muhammad Usman, Susannah Heck, Edmund Clarke, Peter Spencer, Hoon Ryu, Ray Murray, Gerhard Klimeck; Experimental and theoretical study of polarization-dependent optical transitions in InAs quantum dots at telecommunication-wavelengths (1300-1500 nm). J. Appl. Phys. 15 May 2011; 109 (10): 104510. https://doi.org/10.1063/1.3587167
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