A high resolution synchrotron radiation core level photoemission study of the native oxides on was carried out in order to determine the various oxidation states present on the surface. The thermal stability of the oxidation states was also investigated by annealing the samples in vacuum at temperatures ranging from 150 to . As well as the widely reported oxidation states, various arsenic, gallium, and indium oxides, along with mixed phase gallium arsenic and indium gallium oxides are identified. Elemental binary oxides have been identified as residing at the oxide substrate interface and could play an important role in understanding the growth of metal oxide dielectric layers on the InGaAs surface, due to their apparent chemical stability.
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1 September 2010
Research Article|
September 13 2010
Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission
B. Brennan;
B. Brennan
a)
School of Physical Sciences and National Centre for Sensor Research,
Dublin City University
, Dublin 9, Ireland
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G. Hughes
G. Hughes
School of Physical Sciences and National Centre for Sensor Research,
Dublin City University
, Dublin 9, Ireland
Search for other works by this author on:
a)
Electronic mail: barry.brennan5@mail.dcu.ie.
J. Appl. Phys. 108, 053516 (2010)
Article history
Received:
May 27 2010
Accepted:
July 07 2010
Citation
B. Brennan, G. Hughes; Identification and thermal stability of the native oxides on InGaAs using synchrotron radiation based photoemission. J. Appl. Phys. 1 September 2010; 108 (5): 053516. https://doi.org/10.1063/1.3475499
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