High aspect ratio (HAR) silicon etch is reviewed, including commonly used terms, history, main applications, different technological methods, critical challenges, and main theories of the technologies. Chronologically, HAR silicon etch has been conducted using wet etch in solution, reactive ion etch (RIE) in low density plasma, single-step etch at cryogenic conditions in inductively coupled plasma (ICP) combined with RIE, time-multiplexed deep silicon etch in ICP-RIE configuration reactor, and single-step etch in high density plasma at room or near room temperature. Key specifications are HAR, high etch rate, good trench sidewall profile with smooth surface, low aspect ratio dependent etch, and low etch loading effects. Till now, time-multiplexed etch process is a popular industrial practice but the intrinsic scalloped profile of a time-multiplexed etch process, resulting from alternating between passivation and etch, poses a challenge. Previously, HAR silicon etch was an application associated primarily with microelectromechanical systems. In recent years, through-silicon-via (TSV) etch applications for three-dimensional integrated circuit stacking technology has spurred research and development of this enabling technology. This potential large scale application requires HAR etch with high and stable throughput, controllable profile and surface properties, and low costs.

1.
K. E.
Bean
,
IEEE Trans. Electron Devices
25
,
1185
(
1978
).
2.
X.
Li
,
T.
Abe
,
Y.
Liu
, and
M.
Esashi
,
J. Microelectromech. Syst.
11
,
625
(
2002
).
3.
B.
Tan
,
J. Micromech. Microeng.
16
,
109
(
2006
).
4.
S. J.
Kwon
,
Y. M.
Jeong
, and
S. H.
Jeong
,
Appl. Phys. A: Mater. Sci. Process.
86
,
11
(
2007
).
5.
J. M.
Crishal
and
A. O.
Harrington
, “
A Selective Etch for Elemental Silicon
,”
Electrochemical Society Extended Abstract (Spring Meeting)
, Los Angeles, CA, 6–10 May
1962
, Vol.
109
, Abstract #89,
Electrochemical Society
,
Princeton, NJ
.
6.
R. M.
Finne
and
D. L.
Klein
,
J. Electrochem. Soc.
114
,
965
(
1967
).
7.
D. B.
Lee
,
J. Appl. Phys.
40
,
4569
(
1969
).
8.
S. H.
Kim
,
S. H.
Lee
,
H. T.
Lim
, and
Y. K.
Kim
, “
(110) silicon etching for high aspect ratio comb structures
,”
Sixth IEEE International Conference on Emerging Technologies and Factory Automation Proceedings
, Los Angeles, CA, 9–12 Sept.
1997
, pp.
248
252
,
IEEE
,
New York, NY
.
9.
E.
Bassous
,
IEEE Trans. Electron Devices
25
,
1178
(
1978
).
10.
S. H.
Kim
,
S. H.
Lee
,
H. T.
Lim
,
S. K.
Lee
, and
Y. K.
Kim
, “
Anisotropic bulk etching of (110) silicon with high aspect ratio
,”
Technical Digest of the 15th Sensor Symposium
, Kanagawa, Japan, 3–4 June
1997
, pp.
193
196
,
The Institute of Electrical Engineers of Japan (IEEJ)
,
Tokyo, Japan
.
11.
M. D. B.
Charlton
and
G. J.
Parker
,
J. Micromech. Microeng.
7
,
155
(
1997
).
12.
S.
Tachi
,
K.
Tsujimoto
, and
S.
Okudaira
,
Appl. Phys. Lett.
52
,
616
(
1988
).
13.
M. J.
Walker
,
Proc. SPIE
4407
,
89
(
2001
).
14.
N.
Chekurov
,
K.
Grigoras
,
A.
Peltonen
,
S.
Franssila
, and
I.
Tittonen
,
Nanotechnology
20
,
065307
(
2009
).
15.
J. P.
McVittie
and
C.
Gonzalez
,
Proceedings of the Fifth Symposium on Plasma Processing
(
The Electrochemical Society
,
Pennington, NJ, USA
,
1985
), pp.
552
565
.
16.
K.
Hirobe
,
K. I.
Kawamura
, and
K.
Nojiri
,
J. Vac. Sci. Technol. B
5
,
594
(
1987
).
17.
H. K.
Taylor
,
H.
Sun
,
T. F.
Hill
,
A.
Farahanchi
, and
D. S.
Boning
,
J. Electrochem. Soc.
153
,
C575
(
2006
).
18.
J. W.
Coburn
and
H. F.
Winters
,
Appl. Phys. Lett.
55
,
2730
(
1989
).
19.
E. H.
Klaassen
,
K.
Petersen
,
J. M.
Noworolski
,
J.
Logan
,
N. I.
Maluf
,
J.
Brown
,
C.
Storment
,
W.
McCulley
, and
G. T.A.
Kovacs
,
Proceedings on the Eighth International Conference on Solid-State Sensors and Actuators, and Eurosensors IX
, 25–29 June
1995
(
IEEE
,
Stockholm, Sweden
,
1995
), pp.
556
559
.
20.
M. A.
Blauw
,
T.
Zijlstra
, and
E. V. D.
Drift
,
J. Vac. Sci. Technol. B
19
,
2930
(
2001
).
21.
H.
Kawata
,
M.
Yasuda
, and
Y.
Hirai
,
Digest of Papers—Microprocesses and Nanotechnology: 2005 International Microprocesses and Nanotechnology Conference
, 25–26 October
2005
(
IEEE
,
Tokyo, Japan
,
2005
), pp.
198
199
.
22.
J. X.
Gao
,
L. P.
Yeo
,
M. B.
Chan-Park
,
J. M.
Miao
,
Y. H.
Yan
,
J. B.
Sun
,
Y. C.
Lam
, and
C. Y.
Yue
,
J. Microelectromech. Syst.
15
,
84
(
2006
).
23.
H. G.
Teo
,
M. B.
Yu
,
J.
Singh
,
N.
Ranga
, et al.,
2004 Digest of the LEOS Summer Topical Meetings: Biophotonics/Optical Interconnects and VLSI Photonics/WGM Microcavities
, 28–30 June
2004
(
IEEE
,
San Diego, CA, USA
,
2004
), p.
2
.
24.
Y.
Kanamori
,
M.
Sasaki
, and
K.
Hane
,
Proc. SPIE
3874
,
345
(
1999
).
25.
P. B.
Fischer
and
S. Y.
Chou
,
Appl. Phys. Lett.
62
,
1414
(
1993
).
26.
E.
Marty
,
L.
Rousseau
,
B.
Saadany
,
B.
Mercier
,
O.
Français
,
Y.
Mita
, and
T.
Bourouina
,
Microelectron. J.
36
,
673
(
2005
).
27.
Y. Y.
Kim
,
S. S.
Yun
,
C. S.
Park
,
J. H.
Lee
,
Y. G.
Lee
,
H. K.
Lee
,
S. K.
Yoon
, and
J. S.
Kang
,
IEEE Photon. Technol. Lett.
16
,
485
(
2004
).
28.
B.
Morgan
,
C. M.
Waits
,
J.
Krizmanic
, and
R.
Ghodssi
,
J. Microelectromech. Syst.
13
,
113
(
2004
).
29.
Y. F.
Chang
,
Q. R.
Chou
,
J. Y.
Lin
, and
C. H.
Lee
,
Appl. Phys. A: Mater. Sci. Process.
86
,
193
(
2007
).
30.
C. C.
Lin
,
R.
Ghodssi
,
A. A.
Ayon
,
D. Z.
Chen
,
S.
Jacobson
,
K.
Breuer
,
A.
Epstein
, and
M. A.
Schmidt
,
12th IEEE International Conference on Micro Electro Mechanical Systems
, 17–21 January
1999
, (
IEEE
,
Orlando, FL, USA
,
1999
), pp.
529
533
.
31.
A.
Mehra
,
A. A.
Ayon
,
I. A.
Waitz
, and
M. A.
Schmidt
,
J. Microelectromech. Syst.
8
,
152
(
1999
).
32.
M.
Offenberg
,
F.
Laemer
,
B.
Elsner
,
H.
Munzel
, and
W.
Riethmuller
,
The Eighth International Conference on Solid-State Sensors and Actuators
, 25–29 June
1995
(
IEEE
,
Stockholm, Sweden
,
1995
), Vol.
1
, pp.
589
592
.
33.
G. J.
O’Brien
,
D. J.
Monk
, and
K.
Najafi
,
Proc. SPIE
4592
,
315
(
2001
).
34.
C. H.
Lin
,
H. R.
Chen
, and
W.
Fang
,
J. Microlithogr., Microfabr., Microsyst.
4
,
033010
(
2005
).
35.
M.
Putty
and
K.
Njafi
, “
A micromachined vibrating ring gyroscope
,”
Solid State Sensor and Actuator Workshop
, Hilton Head Island, SC, USA, 13–16 June
1994
, pp.
213
220
,
IEEE
,
New York, NY
.
36.
F.
Ayazi
and
K.
Najafi
,
The Eleventh Annual International Workshop on Micro Electro Mechanical Systems
, 25–29 January
1998
(
IEEE
,
Heidelberg, Germany
,
1998
), pp.
621
626
.
37.
B. E.
Volland
,
H.
Heelein
,
I.
Kostic
, and
I. W.
Rangelow
,
Microelectron. Eng.
57–58
,
641
(
2001
).
38.
I. W.
Rangelow
,
Vide: Sci., Tech. Appl.
14
,
24
(
2002
).
39.
S.
Jensen
,
A.
Yalcinkaya
,
S.
Jacobsen
,
T.
Rasmussen
, and
O.
Hansen
,
Phys. Scr., T
T114
,
188
(
2004
).
40.
J.
Tian
and
M.
Bartek
, “
Simultaneous through-silicon via and large cavity formation using deep reactive ion etching and aluminum etch-stop layer
,”
Proceedings on Electronic Components and Technology Conference
, Lake Buena Vista, FL, USA, 27–30 May
2008
, pp.
1787
1792
,
IEEE
,
New York, NY
.
41.
R.
Hon
,
S. X. D.
Zhang
, and
S. W. R.
Lee
,
ASME International Mechanical Engineering Congress and Exposition
, Anaheim, CA, USA, 13–20 November
2004
, pp.
243
248
.
42.
P. D.
Franzon
,
W. R.
Davis
,
M. B.
Steer
,
S.
Lipa
,
E. C.
Oh
,
T.
Thorolfsson
,
T.
Doxsee
,
S.
Berkeley
,
B.
Shani
, and
K.
Obermiller
, “
Design and CAD for 3D integrated circuits
,”
Design Automation Conference
, Anaheim, CA, 8–13 June 2008, pp.
668
673
,
IEEE
,
New York, NY
.
43.
J.
Liang
,
H.
Kijuchi
,
T.
Kono
,
Y.
Yamada
,
T.
Fukushima
,
T.
Tanaka
, and
M.
Koyanagi
,
Emerging Semiconductor Technology-International Semiconductor Technology Conference (ISTC)
, Shanghai, China, 15–17 May
2008
(
Electrochemical Society
,
China
,
2008
), pp.
674
678
.
44.
P.
Singer
,
Semicond. Int.
31
,
22
(
2008
).
45.
D. K.
Schroder
,
R. A.
Wickstrom
, and
P.
Rai-Choudhury
,
Appl. Phys. Lett.
23
,
66
(
1973
).
46.
J. A.
Appels
,
E.
Kooi
,
M. M.
Paffen
,
J. J. H.
Schaturje
, and
W. H.C.G.
Verkuylen
,
Philips Res. Rep.
25
,
118
(
1970
).
47.
J.
Bondur
,
R.
Bucknall
,
F.
Redeker
, and
J.
Su
,
Proc. SPIE
1803
,
45
(
1992
).
48.
J. A.
Bondur
and
H. B.
Pogge
, “
Method for forming isolated regions of silicon utilizing reactive ion etching
,” U.S. Patent No. 4104086 (8, 1,
1978
).
49.
J. A.
Bondur
and
H. B.
Pogge
, “
Reactive ion etching method for producing deep dielectric isolation in silicon
,” U.S. Patent No. 4139442 (2, 13,
1979
).
50.
H. B.
Pogge
,
J. A.
Bondur
, and
P. J.
Burkhardt
,
J. Electrochem. Soc.
130
,
1592
(
1983
).
51.
K. V.
Rao
,
M.
Elahy
,
D. M.
Bordelon
,
S. K.
Banerjee
,
H. L.
Tsai
,
W. F.
Richardson
, and
R. H.
Womack
,
Tech. Dig. - Int. Electron Devices Meet.
1986
,
140
.
52.
T.
Sunami
,
T.
Kure
,
N.
Hashimoto
,
K.
Itoh
,
T.
Toyobe
, and
S.
Asai
,
Tech. Dig. - Int. Electron Devices Meet.
1982
,
806
.
53.
U.
Rudolph
,
E.
Weilmann
,
A.
Kinne
,
A.
Henke
,
P.
Van Holt
,
S.
Wege
,
A.
Khan
,
S.
Pamarthy
,
F.
Schaftlein
, and
T.
Lill
,
International Symposium on Semiconductor Manufacturing Conference Proceeding
, 4–6 May 2004 (
IEEE
,
Boston, MA, USA
,
2004
), pp.
89
–92.
54.
H. M.
Park
,
D. S.
Grimard
,
J. W.
Gizzle
, and
F. O.
Terry
, Jr.
,
IEEE Trans. Semicond. Manuf.
14
,
242
(
2001
).
55.
W. S.
Liao
,
Proc. SPIE
6156
,
615612
(
2006
).
56.
A.
Sammak
,
S.
Azimi
,
S.
Mohajerzadeh
,
B.
Khadem-Hosseini
, and
B.
Fallah-Azad
, “
Silicon nanowire fabrication using novel hydrogenation-assisted deep reactive ion etching
,”
International Semiconductor Device Research Symposium
, College Park, MD, USA, 12–14 December
2007
, pp.
1
2
,
IEEE
,
New York, NY
.
57.
F.
Laermer
and
A.
Schilp
, “
Method of anisotropically etching silicon
,” U.S. Patent No. 5501893 (3, 26,
1996
).
58.
S. B.
Jo
,
M. W.
Lee
,
S. G.
Lee
,
E. H.
Lee
,
S. G.
Park
, and
B. H.
O
,
J. Vac. Sci. Technol. A
23
,
905
(
2005
).
59.
D.
Zhang
,
J.
Wan
,
G.
Yan
,
T.
Li
,
D.
Tian
, and
K.
Deng
, “
High aspect ration Si etching technique and application
,”
Proceedings of International Conference on Solid State Integrated Circuit Technology
, Beijing, China, 21–23 October
1998
, pp.
91
93
,
IEEE
,
New York, NY
.
60.
J.
Van Aelst
,
H.
Struyf
,
W.
Boullart
, and
S.
Vanhaelemeersch
,
Thin Solid Films
516
,
3502
(
2008
).
61.
K. W.
Kok
,
W. J.
Yoo
,
K.
Sooriakumar
,
J. S.
Pan
, and
E. Y.
Lee
,
J. Vac. Sci. Technol. B
20
,
1878
(
2002
).
62.
J.
Hopkins
,
H.
Ashraf
,
J. K.
Bhardwaj
,
A. M.
Hynes
,
I.
Johnston
, and
J. N.
Shepherd
, “
The benefits of process parameter ramping during the plasma etching of high aspect ratio silicon structures
,”
Materials Research Society Symposium Proceedings
, Boston, MA, USA, 1–2 December
1998
,
1999
, pp.
63
68
,
Materials Research Society
,
Warrendale, PA
.
63.
A.
Sammak
,
S.
Azimi
,
N.
Izadi
,
B. K.
Hosseinieh
, and
S.
Mohajerzadeh
,
J. Microelectromech. Syst.
16
,
912
(
2007
).
64.
C. K.
Kang
,
S. M.
Lee
,
I. D.
Jung
,
P. G.
Jung
,
S. J.
Hwang
, and
J. S.
Ko
,
J. Micromech. Microeng.
18
,
075007
(
2008
).
65.
A. A.
Ayón
,
R.
Braff
,
C. C.
Lin
,
H. H.
Sawin
, and
M. A.
Schmidt
,
J. Electrochem. Soc.
146
,
339
(
1999
).
66.
C. B.
Labelle
,
V. M.
Donnelly
,
G. R.
Bogart
,
R. L.
Opila
, and
A.
Komblit
,
J. Vac. Sci. Technol. A
22
,
2500
(
2004
).
67.
S.
Jesen
and
O.
Hansen
,
Proc. SPIE
5342
,
111
(
2004
).
68.
R.
Nagarajan
,
E.
Liao
,
D.
Lee
,
C. S.
Soh
,
K.
Prasad
, and
N.
Balasubramanian
,
Electronic Components and Technology Conference
, 30 May–2 June
2006
(
IEEE
,
San Diego, CA, USA
,
2006
), pp.
383
387
.
69.
P.
Kang
,
S.
Tanaka
, and
M.
Esashi
,
The 14th International Conference on Solid-State Sensors, Actuators, and Microsystems
, 10–14 June
2007
(
IEEE
,
Lyon, France
,
2007
), Vol.
2
, pp.
549
553
.
70.
L. A.
Woldering
,
R. W.
Tjerkstra
,
H. V.
Jansen
,
I. D.
Setija
, and
W. L.
Vos
,
Nanotechnology
19
,
145304
(
2008
).
71.
A.
Stein
and
A.
Taylor
,
J. Vac. Sci. Technol. B
26
,
122
(
2008
).
72.
H.
Rhee
,
H.
Kwon
,
C. K.
Kim
,
H. J.
Kim
,
J.
Yoo
, and
Y. W.
Kim
,
J. Vac. Sci. Technol. B
26
,
576
(
2008
).
73.
K. J.
Morton
,
G.
Nieberg
,
S.
Bai
, and
S. Y.
Chou
,
Nanotechnology
19
,
345301
(
2008
).
74.
J.
Yeom
,
Y.
Wu
, and
M. A.
Shannon
,
Transducers”03—The 12th International Conference on Solid State Sensors, Actuators, and Microsystems
, 8–12 June
2003
(
IEEE
,
Boston, MA, USA
,
2003
), Vol.
2
, pp.
1631
1634
.
75.
J. H.
Min
,
J. K.
Lee
, and
S. H.
Moon
,
J. Vac. Sci. Technol. B
23
,
1405
(
2005
).
76.
T. E. F. M.
Standaert
,
C.
Hedlund
,
E. A.
Joseph
,
G. S.
Oehrlein
, and
T. J.
Daltaon
,
J. Vac. Sci. Technol. A
22
,
53
(
2004
).
77.
M.
Schaepkens
,
T. E. F. M.
Standaert
,
N. R.
Rueger
,
P. G. M.
Sebel
, and
G. S.
Oehrlein
,
J. Vac. Sci. Technol. A
17
,
26
(
1999
).
78.
H.
Rhee
,
H. M.
Lee
,
Y. M.
Namkoung
,
C. K.
Kim
,
H.
Chae
, and
Y. W.
Kim
,
J. Vac. Sci. Technol. B
27
,
33
(
2009
).
79.
C. J.
Mogab
,
J. Electrochem. Soc.
124
,
1262
(
1977
).
80.
F.
Laermer
,
A.
Schilp
,
K.
Funk
, and
M.
Offenberg
,
12th IEEE International Conference on Micro Electro Mechanical Systems
, 17–21 January
1999
(
IEEE
,
Orlando, FL, USA
,
1999
), pp.
211
216
.
81.
P.
Nallan
,
A. H.
Khan
,
A.
Kumar
, and
D.
Podlesnik
,
European Semiconductor
2002
,
41
(
2002
).
82.
K. P.
Giapis
,
G. R.
Scheiler
,
R. A.
Gottscho
,
W. S.
Hobson
, and
Y. H.
Lee
,
Appl. Phys. Lett.
57
,
983
(
1990
).
83.
I. R.
Johnston
,
H.
Ashraf
,
J. K.
Bhardwaj
,
J.
Hopkins
,
A. M.
Hynes
,
G.
Nicholls
,
S. A.
McAuley
,
S.
Hall
,
L.
Atabo
,
G. R.
Bogart
,
A.
Kornblit
, and
A. E.
Novembre
,
Proc. SPIE
3997
,
184
(
2000
).
84.
E.
Nichols
, “Shin-Etsu Chemical Has Introduced Ultra Thick Photoresist—SIPR-7126 For Semiconductor Advanced Packaging Bump Processing,” Semiconductor Packaging News, February 24,
2009
.
85.
K. S.
Chen
,
A. A.
Ayon
,
X.
Zhang
, and
S. M.
Spearing
,
J. Microelectromech. Syst.
11
,
264
(
2002
).
86.
M. W.
Pruessner
,
W. S.
Rabinovich
,
T. H.
Stivater
,
D.
Park
, and
J. W.
Baldwin
,
J. Vac. Sci. Technol. B
25
,
21
(
2007
).
87.
X.
Wang
,
W.
Zeng
,
O.
Russo
, and
E.
Eisenbraun
,
J. Vac. Sci. Technol. B
25
,
1376
(
2007
).
88.
N.
Ranganathan
,
K.
Prasad
,
N.
Balasubramanian
,
G.
Zhou
, and
S. C.
Hwee
, “
high aspect ratio through-wafer interconnect for three dimensional integrated circuits
,”
55th Electronic Components and Technology Conference
, Orlando, Florida, USA, 31 May–3 June
2005
, pp.
343
348
,
IEEE
,
New York, NY
.
89.
R.
Nagarajan
,
K.
Prasad
,
L.
Ebin
, and
B.
Narayanan
,
Sens. Actuators, A
139
,
323
(
2007
).
90.
S.
Lassig
,
Solid State Technol.
50
,
48
(
2007
).
91.
B.
Volland
,
F.
Shi
,
P.
Hudek
,
H.
Heeriein
, and
I. W.
Rangelow
,
J. Vac. Sci. Technol. B
17
,
2768
(
1999
).
92.
G. D.
Boyd
,
L. A.
Coldren
, and
F. G.
Storz
,
Appl. Phys. Lett.
36
,
583
(
1980
).
93.
M. J.
Teixeira
,
M.
Devre
,
W.
Dawson
, and
D.
Johnson
, “
Morphed processing of semiconductor devices
,” U.S. Patent No. 6417013 (7, 9,
2002
).
94.
H.
Jansen
,
M.
de Boer
, and
M.
Elwenspoek
,
Proceedings of the Ninth Annual International Workshop on Micro Electro Mechanical Systems
, 11–15 February
1996
(
IEEE
,
San Diego, CA, USA
,
1996
), pp.
250
257
.
95.
M. A.
Blauw
,
T.
Zijlstra
,
R. A.
Bakker
, and
E.
van der Drift
,
J. Vac. Sci. Technol. B
18
,
3453
(
2000
).
96.
T.
Lill
,
M.
Grimbergen
, and
D.
Mui
,
J. Vac. Sci. Technol. B
19
,
2123
(
2001
).
97.
C. K.
Chung
and
H. C.
Lu
, “
Method for reducing reactive ion etching (RIE) lag in semiconductor fabrication processes
,” U.S. Patent No. 6900136 (5, 31,
2005
).
98.
M. P.
Rao
,
M. F.
Aimi
, and
N. C.
MacDonald
,
Appl. Phys. Lett.
85
,
6281
(
2004
).
99.
W. H.
Juan
and
S. W.
Pang
,
J. Vac. Sci. Technol. A
13
,
834
(
1995
).
100.
H.
Jansen
,
M.
de Boer
,
R.
Wiegerink
,
N.
Tas
,
E.
Smulders
,
C.
Neagu
, and
M.
Elwenspoek
,
Microelectron. Eng.
35
,
45
(
1997
).
101.
J.
Yeom
,
Y.
Wu
,
J. C.
Selby
, and
M. A.
Shannon
,
J. Vac. Sci. Technol. B
23
,
2319
(
2005
).
102.
R. A.
Gottscho
,
C. W.
Jurgensen
, and
D. J.
Vitkavage
,
J. Vac. Sci. Technol. B
10
,
2133
(
1992
).
103.
J.
Kiihamäki
and
S.
Franssila
,
J. Vac. Sci. Technol. A
17
,
2280
(
1999
).
104.
S. L.
Lai
,
D.
Johnson
, and
R.
Westerman
,
J. Vac. Sci. Technol. A
24
,
1283
(
2006
).
105.
Y. J.
Yang
,
W. C.
Kuo
, and
K. C.
Fan
,
Jpn. J. Appl. Phys., Part 1
45
,
305
(
2006
).
106.
H.
Sun
,
T.
Hill
,
H.
Taylor
,
M.
Schmidt
, and
D.
Boning
, “
A two-level prediction model for deep reactive ion etch (DRIE)
,”
18th IEEE International Conference on Microelectromechanical Systems
, Miami, FL, Jan30–Feb. 3,
2005
, pp.
491
495
,
IEEE
,
New York, NY
.
107.
A.
Summanwar
,
F.
Neuilly
, and
T.
Bourouina
,
Ph.D. Research in Microelectronics and Electronics 2008
, 22–25 June
2008
(
IEEE
,
Istanbul, Turkey
,
2008
), pp.
129
132
.
108.
M.
Wasilik
and
A. P.
Pisano
,
Proc. SPIE
4592
,
462
(
2001
).
109.
K.
Yonekura
,
M.
Kiritani
,
S.
Sakamori
,
T.
Yokoi
,
N.
Fujiwara
, and
H.
Miyatake
,
Jpn. J. Appl. Phys., Part 1
37
,
2314
(
1998
).
110.
F.
Laermer
and
A.
Urban
,
Microelectron. Eng.
67–68
,
349
(
2003
).
111.
J.
Hopkins
,
I. R.
Johnston
,
J. K.
Bhardwaj
,
H.
Ashraf
,
A. M.
Hynes
, and
L. M.
Lea
, “
Method and apparatus for etching a substrate
,” U.S. Patent No. 6187685 (2, 13,
2001
).
112.
K. W.
Kok
and
W. J.
Yoo
,
J. Vac. Sci. Technol. B
20
,
154
(
2002
).
113.
T. C.
Lo
and
H. C.
Huang
,
Electron. Lett.
29
,
2202
(
1993
).
114.
C.
Linder
and
N. F.
de Rooij
,
International Conference on Solid-State Sensors and Actuators
, 24–27 June
1991
(
IEEE
,
San Francisco, CA, USA
,
1991
), pp.
524
527
.
115.
C. J.
Mogab
, in
Dry Etching in VLSI Technology
, edited by
S. M.
Sze
(
McGraw-Hill
,
New York
,
1983
), Chap. 8.
116.
R. L.
Lane
and
Z.
Li
,
Proceedings of the Eleventh Biennial University/Government/Industry Microelectronics Symposium
, 16–17 May
1995
(
IEEE
,
Austin, TX, USA
,
1995
), pp.
134
139
.
117.
S.
Aachboun
and
P.
Ranson
,
J. Vac. Sci. Technol. A
17
,
2270
(
1999
).
118.
J. W.
Bartha
,
J.
Greschner
,
M.
Puech
, and
P.
Maquin
,
Microelectron. Eng.
27
,
453
(
1995
).
119.
D.
Lu
,
Z.
Jiang
, and
J.
Wang
,
Proceedings of International Conference on Integrated Commerce Micro Nanosystems
, Sanya, Hainan, China, 10–13 January
2007
(
American Society of Mechanical Engineers
,
New York, USA
,
2007
), Vol.
A
, pp.
597
600
.
120.
B. A.
Ganji
and
B. Y.
Jajlis
,
IEEE International Conference on Semiconductor Electronics
, 29 October–1 December
2006
(
IEEE
,
Kuala Lumpur, Malaysia
,
2006
), pp.
41
47
.
121.
T.
Zijlstra
,
E. V. D.
Drift
,
M. J. A. D.
Dood
,
E.
Snoeks
, and
A.
Polman
,
J. Vac. Sci. Technol. B
17
,
2734
(
1999
).
122.
S.
Aachboun
,
P.
Ranson
,
C.
Hilbert
, and
M.
Boufnichel
,
J. Vac. Sci. Technol. A
18
,
1848
(
2000
).
123.
K.
Tsujimoto
,
T.
Kumihashi
,
N.
Kofuji
, and
S.
Tachi
,
J. Vac. Sci. Technol. A
12
,
1209
(
1994
).
124.
J. W.
Weigold
,
W. H.
Juan
, and
S. W.
Pang
,
J. Vac. Sci. Technol. B
15
,
267
(
1997
).
125.
M. R.
Rakhshandehroo
,
J. W.
Weigold
,
W. C.
Tian
, and
S. W.
Pang
,
J. Vac. Sci. Technol. B
16
,
2849
(
1998
).
126.
A.
Khan
,
A.
Kumar
, and
J.
Dillard
,
Proceedings of the International Symposium on Plasma Process
, edited by
G. S.
Mathad
(
Electrochemical Society
,
Pennington, NJ
,
2000
), pp.
230
238
.
127.
P.
Nallan
,
A.
Khan
,
S.
Pamarthy
,
S. T.
Hsu
, and
A.
Kumar
,
ET Conference Proceeding
(
Applied Materials
,
Santa Clara, CA
,
2001
).
128.
F.
Ameri
,
D.
Gutierrez
,
S.
Pamarthy
,
D.
Scanlan
, and
F.
Schaeftlein
, “
Innovative chamber design and excellent process performance and stability for ultra high aspect ratio deep trench etch
,”
Proceedings of International Symposium on Dry Process
, Nagoya, Japan, 29–30 November
2006
, Vol.
6
, pp.
229
230
,
The Institute of Electrical Engineers of Japan (IEEJ)
,
Tokyo, Japan
.
129.
S.
Gomez
,
R. J.
Belen
, and
M.
Kiehlbauch
,
J. Vac. Sci. Technol. A
22
,
606
(
2004
).
130.
W. C.
Wang
,
J. N.
Ho
, and
P.
Reinhall
,
Fourth International Conference on Advanced Semiconductor Devices and Microsystems
, 14–16 October
2002
(
Smolenice Castle
,
Slovakia
,
2002
), pp.
31
34
.
131.
S.
Gao
and
M.
Chen
,
J. Vac. Sci. Technol. B
10
,
2708
(
1992
).
132.
K.
Murakami
,
Y.
Wakabayashi
,
K.
Minami
, and
M.
Esashi
,
Proceedings of IEEE Micro Electro Mechanical Systems
, 7–10 February
1993
(
IEEE
,
Fort Lauderdale, FL, USA
,
1993
), pp.
65
70
.
133.
Y.
Morikawa
,
T.
Murayama
, and
K.
Suu
,
Proc. SPIE
6798
,
679812
(
2008
).
134.
T. E.
Wicker
and
T. D.
Mantei
,
J. Appl. Phys.
57
,
1638
(
1985
).
135.
C. P.
D’Emic
,
K. K.
Chan
, and
J.
Blum
,
J. Vac. Sci. Technol. B
10
,
1105
(
1992
).
136.
R. W.
Boswell
,
R.
Porteous
,
A.
Prytz
,
A.
Bouchoule
, and
P.
Ranson
,
Phys. Lett. A
91
,
163
(
1982
).
137.
T. D.
Mantei
and
T.
Wicker
,
Appl. Phys. Lett.
43
,
84
(
1983
).
138.
W. C.
Tian
,
J. W.
Weigold
, and
S. W.
Pang
,
J. Vac. Sci. Technol. B
18
,
1890
(
2000
).
139.
K. T.
Sung
,
J. Vac. Sci. Technol. A
11
,
1206
(
1993
).
140.
H. H.
Hwang
,
M.
Meyyappan
,
G. S.
Mathad
, and
R.
Ranade
,
J. Vac. Sci. Technol. B
20
,
2199
(
2002
).
141.
V. N.
Bliznetsov
,
O. P.
Gutshin
, and
V. V.
Yachmenev
,
Proc. SPIE
1783
,
584
(
1992
).
142.
S.
Panda
,
R.
Ranade
, and
G. S.
Mathad
,
J. Electrochem. Soc.
150
,
G612
(
2003
).
143.
J. J.
Choi
,
R.
Toda
,
K.
Minami
, and
M.
Esashi
,
The IEEE 11th Annual International Workshop on Micro Electro Mechanical Systems
, Heidelberg, Germany, 25–29 January
1998
, pp.
322
327
,
IEEE
,
New York, NY
.
144.
B.
Bahreyni
and
C.
Shafai
,
Proceedings of the 2002 IEEE Canadian Conference on Electrical and Computer Engineering
, 12–15 May
2002
(
IEEE
,
Winnipeg, Manitoba, Canada
,
2002
), Vol.
1
, pp.
460
464
.
145.
B.
Wu
and
A.
Kumar
,
Appl. Phys. Lett.
90
,
063105
(
2007
).
146.
B.
Wu
and
A.
Kumar
,
Appl. Phys. Lett.
91
,
163110
(
2007
).
147.
K.
Kurihara
and
M.
Sekine
,
Jpn. J. Appl. Phys., Part 2
39
,
1369
(
2000
).
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