We performed polarization Raman spectroscopy on single wurtzite GaN nanorod bundles grown by plasma-assisted molecular beam epitaxy. The obtained Raman spectra were compared with those of GaN epilayer. The spectral difference between the GaN nanorod bundles and epilayer reveals the relaxation of Raman selection rules in these GaN nanorod bundles. The deviation of polarization-dependent Raman spectroscopy from the prediction of Raman selection rules is attributed to both the orientation of the crystal axis with respect to the polarization vectors of incident and scattered light and the structural defects in the merging boundary of GaN nanorods. The presence of high defect density induced by local strain at the merging boundary was further confirmed by transmission electron microscopy. The averaged defect interspacing was estimated to be around 3 nm based on the spatial correlation model.
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1 August 2010
Research Article|
August 04 2010
Polarization Raman spectroscopy of GaN nanorod bundles Available to Purchase
T. Tite;
T. Tite
Center for Condensed Matter Sciences,
National Taiwan University
, Taipei 10617, Taiwan
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C. J. Lee;
C. J. Lee
Center for Condensed Matter Sciences,
National Taiwan University
, Taipei 10617, Taiwan
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Y.-M. Chang
Y.-M. Chang
a)
Center for Condensed Matter Sciences,
National Taiwan University
, Taipei 10617, Taiwan
Search for other works by this author on:
T. Tite
Center for Condensed Matter Sciences,
National Taiwan University
, Taipei 10617, Taiwan
C. J. Lee
Center for Condensed Matter Sciences,
National Taiwan University
, Taipei 10617, Taiwan
Y.-M. Chang
a)
Center for Condensed Matter Sciences,
National Taiwan University
, Taipei 10617, Taiwan
a)
Electronic mail: [email protected].
J. Appl. Phys. 108, 033504 (2010)
Article history
Received:
April 01 2010
Accepted:
June 08 2010
Citation
T. Tite, C. J. Lee, Y.-M. Chang; Polarization Raman spectroscopy of GaN nanorod bundles. J. Appl. Phys. 1 August 2010; 108 (3): 033504. https://doi.org/10.1063/1.3460811
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