The crystallization speed of the amorphous (, 0.3, and 0.5) films and their thermal, optical, and electrical behaviors were investigated by using a nanopulse scanner (, laser beam diameter ), x-ray diffraction, a four-point probe, and a UV-vis-IR spectrophotometer. These results were compared to the results for a (GST) film, which was comprehensively utilized for phase-change random access memory (PRAM). Both the —value and the thermal stability of the and films were enhanced in comparison to the GST film. Contrarily, the —value of the film was so drastically deteriorated that it could not be quantitatively evaluated. This deterioration occurred because the amorphous film had relatively high reflectance, resulting in the absorption being too low to cause the crystallization. Conclusively, proper compositional films (e.g., ) could be good candidates for PRAM application with both high crystallization speed and thermal stability.
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15 July 2010
Research Article|
July 27 2010
Amorphous-to-crystalline phase transition of thin films
Ki-Ho Song;
Ki-Ho Song
Faculty of Applied Chemical Engineering,
Chonnam National University
, 300 Yongbong-dong, Gwangju 500-757, Republic of Korea
Search for other works by this author on:
Seung-Cheol Beak;
Seung-Cheol Beak
Faculty of Applied Chemical Engineering,
Chonnam National University
, 300 Yongbong-dong, Gwangju 500-757, Republic of Korea
Search for other works by this author on:
Hyun-Yong Lee
Hyun-Yong Lee
a)
Faculty of Applied Chemical Engineering,
Chonnam National University
, 300 Yongbong-dong, Gwangju 500-757, Republic of Korea
Search for other works by this author on:
Ki-Ho Song
Seung-Cheol Beak
Hyun-Yong Lee
a)
Faculty of Applied Chemical Engineering,
Chonnam National University
, 300 Yongbong-dong, Gwangju 500-757, Republic of Korea
a)
Electronic mail: [email protected].
J. Appl. Phys. 108, 024506 (2010)
Article history
Received:
March 25 2010
Accepted:
June 02 2010
Citation
Ki-Ho Song, Seung-Cheol Beak, Hyun-Yong Lee; Amorphous-to-crystalline phase transition of thin films. J. Appl. Phys. 15 July 2010; 108 (2): 024506. https://doi.org/10.1063/1.3457868
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