Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells have been fabricated by a solid-state phosphorus diffusion to convert the shell of the boron-doped p-type Si nanowires to n-type, thus forming a core-shell p-n junction structure. The nanowires with a nanosphere defined diameter were fabricated by an Au-film assisted electrochemical etching method, enabling controlled junction formation. The Si nanowire arrays show superior optical properties over a wide range of spectrum. In addition, longer nanowires are more effective for light trapping and absorption which is more advantageous for efficient energy harvesting. The cells show a high energy conversion efficiency of 1.47%, a significant improvement from the previously reported Si nanowire-based core-shell junction solar cells where the core-shell junctions were formed by an oppositely doped Si deposition on preformed Si nanowires. The relatively high efficiency might be mainly attributed to the extremely low reflectivity of the nanowire arrays for efficient energy harvesting and a pristine junction formation by the diffusion method.
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15 December 2010
Research Article|
December 17 2010
Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells
X. Wang;
X. Wang
1Advanced Materials for Micro- and Nano-Systems Programme,
Singapore-MIT Alliance
, 4 Engineering Drive 3, Singapore
117576
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K. L. Pey;
K. L. Pey
a)
1Advanced Materials for Micro- and Nano-Systems Programme,
Singapore-MIT Alliance
, 4 Engineering Drive 3, Singapore
1175762School of Electrical and Electronic Engineering,
Nanyang Technological University
, 50 Nanyang Avenue, Singapore
639798
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C. H. Yip;
C. H. Yip
1Advanced Materials for Micro- and Nano-Systems Programme,
Singapore-MIT Alliance
, 4 Engineering Drive 3, Singapore
117576
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E. A. Fitzgerald;
E. A. Fitzgerald
1Advanced Materials for Micro- and Nano-Systems Programme,
Singapore-MIT Alliance
, 4 Engineering Drive 3, Singapore
1175763Department of Materials Science and Engineering,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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D. A. Antoniadis
D. A. Antoniadis
1Advanced Materials for Micro- and Nano-Systems Programme,
Singapore-MIT Alliance
, 4 Engineering Drive 3, Singapore
1175764Department of Electrical Engineering and Computer Science,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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a)
Electronic mail: [email protected].
J. Appl. Phys. 108, 124303 (2010)
Article history
Received:
July 05 2010
Accepted:
October 17 2010
Citation
X. Wang, K. L. Pey, C. H. Yip, E. A. Fitzgerald, D. A. Antoniadis; Vertically arrayed Si nanowire/nanorod-based core-shell p-n junction solar cells. J. Appl. Phys. 15 December 2010; 108 (12): 124303. https://doi.org/10.1063/1.3520217
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