Overdamped NbTiN Josephson junctions with Ti–TiN bilayered normal-metal barrier are proposed for metrological applications. Binary arrays consisting of 32 768 NbTiN/Ti–TiN/NbTiN junctions were fabricated for quantum voltage standards, and a Shapiro step at 1 V with the step height of about 0.5 mA was generated at around 8 K. The Ti layer was added to protect the base NbTiN electrode from nitrogen plasma during the deposition of the TiN layer. While the critical current and the junction resistance are mainly dominated by the thickness of the TiN barrier, can be also adjusted by changing the thickness of the Ti barrier to maximize the operating margin for voltage standard circuits. An optimization of the NbTiN film in terms of film stress is also described for fabrication of circuits containing such a large number of junctions.
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1 December 2010
Research Article|
December 02 2010
Preparation of overdamped NbTiN Josephson junctions with bilayered Ti–TiN barriers Available to Purchase
Hirotake Yamamori;
Hirotake Yamamori
a)
National Institute of Advanced Industrial Science and Technology
, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Hitoshi Sasaki;
Hitoshi Sasaki
National Institute of Advanced Industrial Science and Technology
, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Satoshi Kohjiro
Satoshi Kohjiro
National Institute of Advanced Industrial Science and Technology
, 1-1-1 Umezono, Tsukuba 305-8568, Japan
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Hirotake Yamamori
a)
National Institute of Advanced Industrial Science and Technology
, 1-1-1 Umezono, Tsukuba 305-8568, Japan
Hitoshi Sasaki
National Institute of Advanced Industrial Science and Technology
, 1-1-1 Umezono, Tsukuba 305-8568, Japan
Satoshi Kohjiro
National Institute of Advanced Industrial Science and Technology
, 1-1-1 Umezono, Tsukuba 305-8568, Japan
a)
Electronic mail: [email protected].
J. Appl. Phys. 108, 113904 (2010)
Article history
Received:
September 29 2010
Accepted:
October 19 2010
Citation
Hirotake Yamamori, Hitoshi Sasaki, Satoshi Kohjiro; Preparation of overdamped NbTiN Josephson junctions with bilayered Ti–TiN barriers. J. Appl. Phys. 1 December 2010; 108 (11): 113904. https://doi.org/10.1063/1.3517475
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