The equivalent circuit parameters for a pentacene organic field-effect transistor are determined from low frequency impedance measurements in the dark as well as under light illumination. The source-drain channel impedance parameters are obtained from Bode plot analysis and the deviations at low frequency are mainly due to the contact impedance. The charge accumulation at organic semiconductor–metal interface and dielectric–semiconductor interface is monitored from the response to light as an additional parameter to find out the contributions arising from photovoltaic and photoconductive effects. The shift in threshold voltage is due to the accumulation of photogenerated carriers under source-drain electrodes and at dielectric–semiconductor interface, and also this dominates the carrier transport. The charge carrier trapping at various interfaces and in the semiconductor is estimated from the dc and ac impedance measurements under illumination.
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1 December 2010
Research Article|
December 02 2010
Interfaces and traps in pentacene field-effect transistor
C. S. Suchand Sangeeth;
C. S. Suchand Sangeeth
a)
1Department of Physics,
Indian Institute of Science
, Bangalore 560012, India
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P. Stadler;
P. Stadler
2Linz Institute for Organic Solar Cells (LIOS) and Institute for Physical Chemistry,
Johannes Kepler University
, Altenberger Strasse 69, 4040 Linz, Austria
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S. Schaur;
S. Schaur
2Linz Institute for Organic Solar Cells (LIOS) and Institute for Physical Chemistry,
Johannes Kepler University
, Altenberger Strasse 69, 4040 Linz, Austria
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N. S. Sariciftci;
N. S. Sariciftci
2Linz Institute for Organic Solar Cells (LIOS) and Institute for Physical Chemistry,
Johannes Kepler University
, Altenberger Strasse 69, 4040 Linz, Austria
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Reghu Menon
Reghu Menon
1Department of Physics,
Indian Institute of Science
, Bangalore 560012, India
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a)
Electronic mail: [email protected].
J. Appl. Phys. 108, 113703 (2010)
Article history
Received:
August 16 2010
Accepted:
October 18 2010
Citation
C. S. Suchand Sangeeth, P. Stadler, S. Schaur, N. S. Sariciftci, Reghu Menon; Interfaces and traps in pentacene field-effect transistor. J. Appl. Phys. 1 December 2010; 108 (11): 113703. https://doi.org/10.1063/1.3517085
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