The recent achievement of the high thermoelectric figure of merit in nanograined materials is attributed to the successful optimization of the consolidation process. Despite a thermal conductivity reduction, it has been experimentally observed that the porous nanograined materials have lower thermoelectric figure of merit than their bulk counterpart due to significant reduction in the electrical conductivity. In this paper, nanoscale porosity effects on electron and phonon transport are modeled to predict and explain thermoelectric properties in porous nanograined materials. Electron scattering at the pores is treated quantum mechanically while phonon transport is treated using a classical picture. The modeling results show that the charge carriers are scattered more severely in nanograined materials than the macroscale porous materials, due to a higher number density of scattering sites. Porous nanograined materials have enhanced Seebeck coefficient due to energy filtering effect and low thermal conductivity, which are favorable for thermoelectric applications. However, the benefit is not large enough to overcome the deficit in the electrical conductivity, so that a high sample density is necessary for nanograined SiGe.
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1 May 2010
Research Article|
May 06 2010
Effects of nanoscale porosity on thermoelectric properties of SiGe
Hohyun Lee;
Hohyun Lee
1Department of Mechanical Engineering,
Santa Clara University
, Santa Clara, California 95053, USA
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Daryoosh Vashaee;
Daryoosh Vashaee
2School of Electrical and Computer Engineering,
Oklahoma State University
, Tulsa, Oklahoma 74106, USA
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D. Z. Wang;
D. Z. Wang
3Department of Physics,
Boston College
, Chestnut Hill, Massachusetts 02467, USA
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Mildred S. Dresselhaus;
Mildred S. Dresselhaus
4Department of Electrical Engineering and Computer Science,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
5Department of Physics,
Massachusetts Institute of Technology
, Cambridge, Massachusetts 02139, USA
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Z. F. Ren;
Z. F. Ren
3Department of Physics,
Boston College
, Chestnut Hill, Massachusetts 02467, USA
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a)
Author to whom correspondence should be addressed. Tel.: 617-253-0006. FAX: 617-258-5802. Electronic mail: [email protected].
J. Appl. Phys. 107, 094308 (2010)
Article history
Received:
March 10 2009
Accepted:
March 17 2010
Citation
Hohyun Lee, Daryoosh Vashaee, D. Z. Wang, Mildred S. Dresselhaus, Z. F. Ren, Gang Chen; Effects of nanoscale porosity on thermoelectric properties of SiGe. J. Appl. Phys. 1 May 2010; 107 (9): 094308. https://doi.org/10.1063/1.3388076
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