We report here a detailed study about the formation and self-organization of nanoscale structures during ion beam implantation at room temperature of 300 keV Ge+ in Ge as a function of the ion fluence in the range between 1×1014 to 4×1016cm2. “Microexplosions” characterize the morphology of the swelled material; a random cellular structure consisting of cells surrounded by amorphous Ge ripples has been observed and studied in details by combining atomic force microscopy, scanning electron microscopy, and transmission electron microscopy.

1.
E.
Chason
,
S. T.
Picraux
,
J. M.
Poate
,
J. O.
Borland
,
M. I.
Current
,
T.
Diaz de la Rubia
,
D. J.
Eaglesham
,
O. W.
Holland
,
M. E.
Law
,
C. W.
Magee
,
J. W.
Mayer
,
J.
Melngailis
, and
A. F.
Tasch
,
J. Appl. Phys.
81
,
6513
(
1997
).
2.
A. V.
Krasheninnikov
and
F.
Banhart
,
Nature Mater.
6
,
723
(
2007
).
3.
I. H.
Wilson
,
J. Appl. Phys.
53
,
1698
(
1982
).
4.
B.
Stritzker
,
R. G.
Elliman
, and
J.
Zou
,
Nucl. Instrum. Methods Phys. Res. B
175–177
,
193
(
2001
).
5.
O. W.
Holland
,
B. R.
Appleton
, and
J.
Narayan
,
J. Appl. Phys.
54
,
2295
(
1983
).
6.
H.
Huber
,
W.
Assmann
,
S. A.
Karamian
,
A.
Mücklich
,
W.
Prusseit
,
E.
Gazis
,
G.
Grötzschel
,
M.
Kokkoris
,
E.
Kossionidis
,
H. D.
Mieskes
, and
R.
Vlastou
,
Nucl. Instrum. Methods Phys. Res. B
122
,
542
(
1997
).
7.
T.
Janssens
,
C.
Huyghebaert
,
D.
Vanhaeren
,
G.
Winderickx
,
A.
Satta
,
M.
Meuris
, and
W.
Vandervorst
,
J. Vac. Sci. Technol. B
24
,
510
(
2006
).
8.
S.
Koffel
,
P.
Scheiblin
,
A.
Claverie
, and
G.
Benassayag
,
J. Appl. Phys.
105
,
013528
(
2009
).
9.
L.
Ottaviano
,
A.
Verna
,
V.
Grossi
,
P.
Parisse
,
S.
Piperno
,
M.
Passacantando
,
G.
Impellizzeri
, and
F.
Priolo
,
Surf. Sci.
601
,
2623
(
2007
).
10.
J.
Yanagisawa
,
K.
Takarabe
,
K.
Ogushi
,
K.
Gamo
, and
Y.
Akasaka
,
J. Phys.: Condens. Matter
19
,
445002
(
2007
).
11.
M.
Posselt
,
L.
Bischoff
,
D.
Grambole
, and
F.
Herrmann
,
Appl. Phys. Lett.
89
,
151918
(
2006
).
12.
G. L.
Destefanis
and
J. P.
Gailliard
,
Appl. Phys. Lett.
36
,
40
(
1980
).
13.
S. O.
Kucheyev
,
J. S.
Williams
,
C.
Jagadish
,
J.
Zou
,
V. S. J.
Craig
, and
G.
Li
,
Appl. Phys. Lett.
77
,
1455
(
2000
).
14.
N.
Nitta
,
M.
Taniwaki
,
Y.
Hayashi
, and
T.
Yoshiie
,
J. Appl. Phys.
92
,
1799
(
2002
).
15.
C. M.
Lieber
,
MRS Bull.
28
,
486
(
2003
).
16.
J. F.
Ziegler
,
J. P.
Biersack
, and
U.
Littmark
,
The Stopping and Range of Ions in Solids
,
Stopping and Ranges of Ions in Matter
Vol.
1
(
Pergamon
,
New York
,
1984
).
17.
S. G.
Mayr
and
R. S.
Averback
,
Phys. Rev. B
71
,
134102
(
2005
).
18.
E.
Rimini
,
Ion Implantation: Basics to Device Fabrication
(
Kluwer Academic
,
Boston
,
1995
).
19.
L. M.
Wang
and
R. C.
Birtcher
,
Appl. Phys. Lett.
55
,
2494
(
1989
).
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