Hydrodynamic instabilities in one-dimensional electron flow in semiconductor and their dependency with the electron and lattice temperatures are studied here. The driving force for the electrons is imposed by a voltage difference, and the hydrodynamic and electrostatic equations are linearized with respect to the steady-flow solution. A two-temperature hydrodynamic model predicts a stable electron flow through the semiconductor. A one-temperature hydrodynamic model is obtained by neglecting the electron energy losses due to heat conduction and scattering. This model shows that the electron flow can become unstable and establishes a criterion for that. Applied voltage and temperature can play the role of tunable parameters in the stability of the electron flow.
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1 April 2010
Research Article|
April 08 2010
Temperature influence on hydrodynamic instabilities in a one-dimensional electron flow in semiconductors
Williams R. Calderón-Muñoz;
Williams R. Calderón-Muñoz
a)
1Departamento de Ingeniería Mecánica,
Universidad de Chile
, Beauchef 850, Santiago, Chile
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Debdeep Jena;
Debdeep Jena
2Department of Electrical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556 USA
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Mihir Sen
Mihir Sen
3Department of Aerospace and Mechanical Engineering,
University of Notre Dame
, Notre Dame, Indiana 46556 USA
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a)
Electronic mail: [email protected].
J. Appl. Phys. 107, 074504 (2010)
Article history
Received:
January 05 2010
Accepted:
January 21 2010
Citation
Williams R. Calderón-Muñoz, Debdeep Jena, Mihir Sen; Temperature influence on hydrodynamic instabilities in a one-dimensional electron flow in semiconductors. J. Appl. Phys. 1 April 2010; 107 (7): 074504. https://doi.org/10.1063/1.3326946
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