We demonstrate GaInN multiple quantum well (MQW) light-emitting diodes (LEDs) having ternary GaInN quantum barriers (QBs) instead of conventional binary GaN QBs for a reduced polarization mismatch between QWs and QBs and an additional separate confinement of carriers to the MQW active region. In comparison with GaInN LEDs with conventional GaN QBs, the GaInN/GaInN LEDs show a reduced blueshift of the peak wavelength with increasing injection current and a reduced forward voltage. In addition, we investigate the density of pits emerging on top of the MQW layer that are correlated with V-defects and act as a path for the reverse leakage current. The GaInN/GaInN MQW structure has a lower pit density than the GaInN/GaN MQW structure as well as a lower reverse leakage current. Finally, the GaInN/GaInN MQW LEDs show higher light output power and external quantum efficiency at high injection currents compared to the conventional GaInN/GaN MQW LEDs. We attribute these results to the reduced polarization mismatch and the reduced lattice mismatch in the GaInN/GaInN MQW active region.
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15 March 2010
Research Article|
March 16 2010
Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes
Wonseok Lee;
Wonseok Lee
1Future Chips Constellation and Engineering Science Program,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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Min-Ho Kim;
Min-Ho Kim
2
Samsung LED
, Suwon 443-743, South Korea
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Di Zhu;
Di Zhu
3Future Chips Constellation and Department of Physics, Applied Physics, and Astronomy,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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Ahmed N. Noemaun;
Ahmed N. Noemaun
4Future Chips Constellation and Department of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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Jong Kyu Kim;
Jong Kyu Kim
5Department of Materials Science and Engineering,
Pohang University of Science and Technology
, Pohang 790-784, South Korea
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E. F. Schubert
E. F. Schubert
a)
4Future Chips Constellation and Department of Electrical, Computer, and Systems Engineering,
Rensselaer Polytechnic Institute
, Troy, New York 12180, USA
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a)
Author to whom correspondence should be addressed. Electronic mail: efschubert@rpi.edu.
J. Appl. Phys. 107, 063102 (2010)
Article history
Received:
October 21 2009
Accepted:
January 25 2010
Citation
Wonseok Lee, Min-Ho Kim, Di Zhu, Ahmed N. Noemaun, Jong Kyu Kim, E. F. Schubert; Growth and characteristics of GaInN/GaInN multiple quantum well light-emitting diodes. J. Appl. Phys. 15 March 2010; 107 (6): 063102. https://doi.org/10.1063/1.3327425
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