Si/SiGe quantum cascade superlattice designs for terahertz emission

Quantum cascade lasers (QCLs) are compact sources that have demonstrated high output powers at terahertz (THz) frequencies. To date, all THz QCLs have been realized in III-V materials. Results are presented from $Si1−xGex$ quantum cascade superlattice designs emitting at around 3 THz which have been grown in two different chemical vapor deposition systems. The key to achieving successful electroluminescence at THz frequencies in a $p$-type system has been to strain the light-hole states to energies well above the radiative subband states. To accurately model the emission wavelengths, a 6-band $k⋅p$ tool which includes the effects of nonabrupt heterointerfaces has been used to predict the characteristics of the emitters. X-ray diffraction and transmission electron microscopy have been used along with Fourier transform infrared spectroscopy to fully characterize the samples. A number of methods to improve the gain from the designs are suggested.