ZnTe(110) is widely used as a source of terahertz radiation generated by optical rectification. However, when ZnTe(110) is excited with 800 nm light, optical rectification is not the only process which can occur. Specifically, second harmonic generation and two-photon absorption are also possibilities. In addition, free carriers generated by two-photon absorption can absorb terahertz radiation, further reducing the efficiency of optical rectification. We have used terahertz emission spectroscopy to study these effects by analyzing the dependence of the terahertz waveform on excitation fluence. At high excitation fluences, the overall efficiency is reduced and the trailing edge of the waveform is attenuated. A simple model reproduces the measured behavior.
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1 February 2010
Research Article|
February 11 2010
Influence of free-carrier absorption on terahertz generation from ZnTe(110)
Shayne M. Harrel;
Shayne M. Harrel
a)
Department of Chemistry,
Yale University
, 225 Prospect Street, New Haven, Connecticut 06520-8107, USA
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Rebecca L. Milot;
Rebecca L. Milot
Department of Chemistry,
Yale University
, 225 Prospect Street, New Haven, Connecticut 06520-8107, USA
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James M. Schleicher;
James M. Schleicher
b)
Department of Chemistry,
Yale University
, 225 Prospect Street, New Haven, Connecticut 06520-8107, USA
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Charles A. Schmuttenmaer
Charles A. Schmuttenmaer
c)
Department of Chemistry,
Yale University
, 225 Prospect Street, New Haven, Connecticut 06520-8107, USA
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a)
Present address: Food & Drug Administration, Winchester Analytical and Engineering Center, 109 Holton St., Winchester, Massachusetts 01890, USA.
b)
Present address: The University of Michigan Law School, 625 South State Street, Ann Arbor, Michigan, 48109-1215, USA.
c)
Electronic mail: [email protected].
J. Appl. Phys. 107, 033526 (2010)
Article history
Received:
October 06 2009
Accepted:
December 21 2009
Citation
Shayne M. Harrel, Rebecca L. Milot, James M. Schleicher, Charles A. Schmuttenmaer; Influence of free-carrier absorption on terahertz generation from ZnTe(110). J. Appl. Phys. 1 February 2010; 107 (3): 033526. https://doi.org/10.1063/1.3296064
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