There is considerable current interest in using molecular materials to influence the surface potential of semiconductor devices for nanoelectronic and sensing applications. We present experimental capacitance-voltage results showing that systematic Schottky barrier height modulation can be achieved using dipolar molecular layers in gold-molecule-silicon devices. A computational methodology that combines quantum chemistry and traditional electrostatic calculations is used to explore various physical effects that can influence barrier heights in such systems. Nonidealities such as silicon surface states can influence both the potential profile within the device and the validity of the extracted barrier height. Our devices exhibit low surface state densities, but the magnitude of surface potential modulation is modest due to molecular depolarization from the gold contact.
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15 January 2010
Research Article|
January 25 2010
Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results Available to Purchase
Adina Scott;
Adina Scott
a)
1School of Electrical and Computer Engineering, Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
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Chad Risko;
Chad Risko
2Department of Chemistry,
Northwestern University
, Evanston, Illinois 60208, USA
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Nicholas Valley;
Nicholas Valley
2Department of Chemistry,
Northwestern University
, Evanston, Illinois 60208, USA
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Mark A. Ratner;
Mark A. Ratner
2Department of Chemistry,
Northwestern University
, Evanston, Illinois 60208, USA
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David B. Janes
David B. Janes
1School of Electrical and Computer Engineering, Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
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Adina Scott
1,a)
Chad Risko
2
Nicholas Valley
2
Mark A. Ratner
2
David B. Janes
1
1School of Electrical and Computer Engineering, Birck Nanotechnology Center,
Purdue University
, West Lafayette, Indiana 47907, USA
2Department of Chemistry,
Northwestern University
, Evanston, Illinois 60208, USA
a)
Electronic mail: [email protected].
J. Appl. Phys. 107, 024505 (2010)
Article history
Received:
August 08 2009
Accepted:
September 21 2009
Citation
Adina Scott, Chad Risko, Nicholas Valley, Mark A. Ratner, David B. Janes; Molecular modulation of Schottky barrier height in metal-molecule-silicon diodes: Capacitance and simulation results. J. Appl. Phys. 15 January 2010; 107 (2): 024505. https://doi.org/10.1063/1.3251466
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