MgO has been suggested as a possible high- dielectric for future complementary metal-oxide semiconductor processes. In this work, the time dependent dielectric breakdown (TDDB) characteristics of 20 nm MgO films are discussed. Stress induced leakage current measurements indicate that the low measured Weibull slopes of the TDDB distributions for both -type and -type devices cannot be attributed to a lower trap generation rate than for . This suggests that much fewer defects are required to trigger breakdown in MgO under voltage stress than is the case for or other metal-oxide dielectrics. This in turn explains the progressive nature of the breakdown in these films which is observed both in this work and elsewhere. The reason fewer defects are required is attributed to the morphology of the films.
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15 January 2010
Research Article|
January 19 2010
Degradation and breakdown characteristics of thin MgO dielectric layers
Robert O’Connor;
Robert O’Connor
a)
1School of Physical Sciences,
Dublin City University
, Glasnevin, Dublin 9, Ireland
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Greg Hughes;
Greg Hughes
1School of Physical Sciences,
Dublin City University
, Glasnevin, Dublin 9, Ireland
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Patrick Casey;
Patrick Casey
1School of Physical Sciences,
Dublin City University
, Glasnevin, Dublin 9, Ireland
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Simon B. Newcomb
Simon B. Newcomb
2
Glebe Scientific Ltd.
, Newport, County Tipperary, Ireland
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a)
Electronic mail: roc@physics.dcu.ie.
J. Appl. Phys. 107, 024501 (2010)
Article history
Received:
August 17 2009
Accepted:
October 22 2009
Citation
Robert O’Connor, Greg Hughes, Patrick Casey, Simon B. Newcomb; Degradation and breakdown characteristics of thin MgO dielectric layers. J. Appl. Phys. 15 January 2010; 107 (2): 024501. https://doi.org/10.1063/1.3265434
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