The present study focuses on the photoluminescence (PL) properties of ZnO films prepared by the reaction of water and zinc. Temperature-dependent PL characteristics of the ZnO films have been investigated in the range from 15 to 260 K. The PL spectrum at 15 K is dominated by neutral donor-bound exciton emissions. The emission line at about 3.304 eV can be due to the transition of free electrons to neutral acceptor states . It is suggested that the ultraviolet emission at room temperature can be attributed to the incorporation of and free exciton (FX) transitions, rather than sole FX. According to the temperature behavior of green band, it is further confirmed that the green emission is mainly related to the singly ionized oxygen vacancies.
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15 January 2010
Research Article|
January 19 2010
Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films Available to Purchase
Xiangdong Meng;
Xiangdong Meng
a)
1School of Physics Science and Technology,
Yangzhou University
, Yangzhou, Jiangsu 225002, People’s Republic of China
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Zhiming Shi;
Zhiming Shi
1School of Physics Science and Technology,
Yangzhou University
, Yangzhou, Jiangsu 225002, People’s Republic of China
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Xiaobing Chen;
Xiaobing Chen
a)
1School of Physics Science and Technology,
Yangzhou University
, Yangzhou, Jiangsu 225002, People’s Republic of China
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Xianghua Zeng;
Xianghua Zeng
1School of Physics Science and Technology,
Yangzhou University
, Yangzhou, Jiangsu 225002, People’s Republic of China
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Zhuxi Fu
Zhuxi Fu
2Department of physics,
University of Science and Technology of China
, Hefei, Anhui 230026, People’s Republic of China
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Xiangdong Meng
1,a)
Zhiming Shi
1
Xiaobing Chen
1,a)
Xianghua Zeng
1
Zhuxi Fu
2
1School of Physics Science and Technology,
Yangzhou University
, Yangzhou, Jiangsu 225002, People’s Republic of China
2Department of physics,
University of Science and Technology of China
, Hefei, Anhui 230026, People’s Republic of China
a)
Authors to whom correspondence should be addressed. Electronic addresses: [email protected] and [email protected]. Tel.: +86-514-87991067.
J. Appl. Phys. 107, 023501 (2010)
Article history
Received:
August 04 2009
Accepted:
December 06 2009
Citation
Xiangdong Meng, Zhiming Shi, Xiaobing Chen, Xianghua Zeng, Zhuxi Fu; Temperature behavior of electron-acceptor transitions and oxygen vacancy recombinations in ZnO thin films. J. Appl. Phys. 15 January 2010; 107 (2): 023501. https://doi.org/10.1063/1.3284101
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