The SnTe, Sn1xEuxTe and Sn1xSrxTe(x<0.06) films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around 1×1019cm3 with high mobility exceeding 2000cm2/Vs at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the Sn1xEuxTe and Sn1xSrxTe systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.

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