The SnTe, and films were prepared by hot wall epitaxy. The ternary alloy films prepared in cation rich condition had hole concentration around with high mobility exceeding at room temperature. Optical transmission spectra were also measured in the temperature range from 100 to 400 K and compared with theoretical calculations. Optical transmission spectra of the SnTe were simulated successfully assuming bumped band edge structures. A band inversion model was proposed for the and systems, and the optical transmission spectra were also simulated successfully assuming the band inversion model.
Electrical and optical properties of SnEuTe and SnSrTe films
Akihiro Ishida, Takuro Tsuchiya, Tomohiro Yamada, Daoshe Cao, Sadao Takaoka, Mohamed Rahim, Ferdinand Felder, Hans Zogg; Electrical and optical properties of SnEuTe and SnSrTe films. J. Appl. Phys. 15 June 2010; 107 (12): 123708. https://doi.org/10.1063/1.3446819
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