Organic field-effect transistors (OFETs) suffer from limitations such as low mobility of charge carriers and high access resistance. Direct and accurate evaluation of these quantities becomes crucial for understanding the OFETs properties. We introduce the Y function method (YFM) to pentacene OFETs. This method allows us to evaluate the low-field mobility without the access or contact resistance influence. The low-field mobility is shown to be more appropriate than the currently applied field-effect mobility for the OFETs’ performance evaluation. Its unique advantage is to directly suppress the contact resistance influence in individual transistors, although such contact resistance is a constant as compared to the widely accepted variable one with respect to the gate voltage. After a comparison in detail with the transmission-line method, the YFM proved to be a fast and precise alternative method for the contact resistance evaluation. At the same time, how the contact resistance affects the effective mobility and the field-effect mobility in organic transistors is also addressed.
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1 June 2010
Research Article|
June 03 2010
Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors Available to Purchase
Yong Xu;
Yong Xu
1IMEP-LAHC, INP-Grenoble,
MINATEC
, 3 Parvis Louis Neel, BP 257, 38016 Grenoble, France
Search for other works by this author on:
Takeo Minari;
Takeo Minari
2MANA,
NIMS
, Tsukuba, Ibaraki 305-0044, Japan
3
RIKEN
, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
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Kazuhito Tsukagoshi;
Kazuhito Tsukagoshi
2MANA,
NIMS
, Tsukuba, Ibaraki 305-0044, Japan
4CREST,
JST
, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
Search for other works by this author on:
J. A. Chroboczek;
J. A. Chroboczek
1IMEP-LAHC, INP-Grenoble,
MINATEC
, 3 Parvis Louis Neel, BP 257, 38016 Grenoble, France
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Gerard Ghibaudo
Gerard Ghibaudo
a)
1IMEP-LAHC, INP-Grenoble,
MINATEC
, 3 Parvis Louis Neel, BP 257, 38016 Grenoble, France
Search for other works by this author on:
Yong Xu
1
Takeo Minari
2,3
Kazuhito Tsukagoshi
2,4
J. A. Chroboczek
1
Gerard Ghibaudo
1,a)
1IMEP-LAHC, INP-Grenoble,
MINATEC
, 3 Parvis Louis Neel, BP 257, 38016 Grenoble, France
2MANA,
NIMS
, Tsukuba, Ibaraki 305-0044, Japan
3
RIKEN
, 2-1 Hirosawa, Wako, Saitama 351-0198, Japan
4CREST,
JST
, 4-1-8 Honcho, Kawaguchi, Saitama 332-0012, Japan
a)
Author to whom correspondence should be addressed. Electronic mail: [email protected].
J. Appl. Phys. 107, 114507 (2010)
Article history
Received:
March 26 2010
Accepted:
April 27 2010
Citation
Yong Xu, Takeo Minari, Kazuhito Tsukagoshi, J. A. Chroboczek, Gerard Ghibaudo; Direct evaluation of low-field mobility and access resistance in pentacene field-effect transistors. J. Appl. Phys. 1 June 2010; 107 (11): 114507. https://doi.org/10.1063/1.3432716
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